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与硫化镉相比,硒化镉纳米晶体中热电子的固有缓慢冷却

Intrinsically Slow Cooling of Hot Electrons in CdSe Nanocrystals Compared to CdS.

作者信息

Coley-O'Rourke Matthew J, Hou Bokang, Sherman Skylar J, Dukovic Gordana, Rabani Eran

机构信息

Department of Chemistry, University of California, Berkeley, California 94720, United States.

Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.

出版信息

Nano Lett. 2025 Jan 8;25(1):244-250. doi: 10.1021/acs.nanolett.4c04912. Epub 2024 Dec 18.

Abstract

The utilization of excited charge carriers in semiconductor nanocrystals (NCs) for optoelectronic technologies has been a long-standing goal in the field of nanoscience. Experimental efforts to extend the lifetime of excited carriers have therefore been a principal focus. To understand the limits of these lifetimes, in this work, we theoretically study the time scales of pure electron relaxation in negatively charged NCs composed of two prototypical materials: CdSe and CdS. We find that hot electrons in CdSe have lifetimes that are 5 to 6 orders of magnitude longer than in CdS when the relaxation is governed only by the intrinsic properties of the materials. Although these two materials are known to have somewhat different electronic structure, we elucidate how this enormous difference in lifetimes arises from relatively small quantitative differences in electronic energy gaps and phonon frequencies, as well as the crucial role of Fröhlich-type electron-phonon couplings.

摘要

将半导体纳米晶体(NCs)中的激发电荷载流子用于光电子技术一直是纳米科学领域长期以来的目标。因此,延长激发载流子寿命的实验努力一直是主要关注点。为了理解这些寿命的极限,在这项工作中,我们从理论上研究了由两种典型材料CdSe和CdS组成的带负电荷的纳米晶体中纯电子弛豫的时间尺度。我们发现,当弛豫仅由材料的固有性质决定时,CdSe中的热电子寿命比CdS中的热电子寿命长5到6个数量级。尽管已知这两种材料具有 somewhat 不同的电子结构,但我们阐明了这种寿命上的巨大差异是如何由电子能隙和声子频率的相对较小的定量差异以及弗罗利希型电子 - 声子耦合的关键作用产生的。 (注:原文中“somewhat”翻译为“ somewhat ”可能有误,这里先按原文呈现,正常应翻译为“有些”等合适表述)

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