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多晶氧化铝中的残余应力:基于荧光测量的二维图谱与积分扫描的比较

Residual stress in polycrystalline alumina: Comparison of two-dimensional maps and integrated scans in fluorescence-based measurements.

作者信息

Michaels Chris A, Cook Robert F

机构信息

Materials Measurement Science Division, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.

出版信息

Acta Mater. 2018 Oct;159. doi: 10.1016/j.actamat.2018.08.025.

Abstract

The spatially heterogeneous residual stress fields in a series of three polycrystalline alumina materials are compared using two fluorescence-based measurement techniques. In the first technique, 18 hyperspectral arrays of the Cr-based and ruby fluorescence line shifts are formed into two-dimensional maps of stress components, and experimental stress distributions are calculated using both spectral lines jointly. In the second technique, the data are formed into integrated scans reflecting the average spectra within the maps and assumed Gaussian stress distributions are calculated, using the spectral lines singly. Comparison of the distribution parameters shows that the single-peak-based integrated scan technique significantly overestimates the variation of the mean crystallographic stresses relative to the two-peak-based two-dimensional map technique. In addition, the integrated scan technique suggests standard deviations for the crystallographic stress distributions that are significantly greater than those determined from two-dimensional map observations. Although, when a sufficient area of the microstructure is examined, the averaged results of the two techniques agree, the two-dimensional map method is preferred as it makes full use of the two-peak spectra and provides explicit stress distribution determinations. For the approximately grain size materials examined here the -axis stress distributions determined from the mapping technique were characterized by means ± standard deviations of approximately (190 ± 40) MPa.

摘要

使用两种基于荧光的测量技术比较了一系列三种多晶氧化铝材料中的空间非均匀残余应力场。在第一种技术中,将基于Cr和红宝石荧光线位移的18个高光谱阵列形成应力分量的二维图,并使用两条光谱线联合计算实验应力分布。在第二种技术中,将数据形成反映图内平均光谱的积分扫描,并单独使用光谱线计算假定的高斯应力分布。分布参数的比较表明,相对于基于双峰的二维图技术,基于单峰的积分扫描技术显著高估了平均晶体学应力的变化。此外,积分扫描技术表明晶体学应力分布的标准偏差明显大于从二维图观测确定的标准偏差。尽管当检查足够大的微观结构区域时,两种技术的平均结果一致,但二维图方法更可取,因为它充分利用了双峰光谱并提供明确的应力分布测定。对于此处研究的近似晶粒尺寸材料,通过映射技术确定的z轴应力分布的特征是平均值±标准偏差约为(190±40)MPa。

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