Balhara Annu, Gupta Santosh K, Modak Brindaban, Yadav Ashok Kumar, Naidu Boddu S, Sudarshan Kathi
Radiochemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085, India.
Homi Bhabha National Institute, Anushaktinagar, Mumbai 400094, India.
ACS Appl Mater Interfaces. 2025 Jan 8;17(1):1509-1521. doi: 10.1021/acsami.4c15899. Epub 2024 Dec 20.
Shortwave infrared (SWIR)-emitting materials have emerged as superior light sources with increasing demand for potential applications in noninvasive analysis, night vision illumination, and medical diagnosis. For developing next-generation SWIR phosphor-converted light-emitting diodes (pc-LEDs), the scarcity of intense blue-light-pumped broadband SWIR luminescent materials and poor thermal stability of current Ni-activated phosphors are the ongoing challenges. Here, a blue-light-excitable (440 nm) YAlGaO:Cr,Ni phosphor with ultrawide SWIR emission centered at ∼1430 nm (FWHM ∼264 nm) is reported. The efficient Cr → Ni energy transfer is exploited for a remarkable enhancement of 18-fold in SWIR emission under blue-light excitation. Significantly, the excellent thermal stability (90% at 440 K) of the SWIR band is obtained in the codoped phosphor which is the best among reported SWIR phosphors. Besides, the experimental techniques (XANES and EXAFS) and density functional theory calculations are employed to investigate the local structure and propose [GaO] octahedrons as favorable occupation sites for Ni/Cr ions. A SWIR pc-LED is fabricated using a blue chip as a proof of concept for invisible illumination technology, nondestructive spectroscopic analysis, anticounterfeiting, and imaging applications. This work offers effective insights into energy transfer-assisted SWIR enhancement and presents a thermally robust Cr-Ni-codoped phosphor for designing future mini-SWIR pc-LEDs for spectroscopy applications.
随着对非侵入性分析、夜视照明和医学诊断等潜在应用的需求不断增加,发射短波红外(SWIR)的材料已成为卓越的光源。对于开发下一代SWIR磷光体转换发光二极管(pc-LED)而言,高强度蓝光泵浦宽带SWIR发光材料的稀缺以及当前镍激活磷光体较差的热稳定性是持续存在的挑战。在此,报道了一种蓝光可激发(440 nm)的YAlGaO:Cr,Ni磷光体,其具有以1430 nm为中心的超宽SWIR发射(半高宽264 nm)。利用有效的Cr→Ni能量转移,在蓝光激发下SWIR发射显著增强了18倍。值得注意的是,在共掺杂磷光体中获得了SWIR波段优异的热稳定性(在440 K时为90%),这在已报道的SWIR磷光体中是最佳的。此外,采用实验技术(XANES和EXAFS)以及密度泛函理论计算来研究局部结构,并提出[GaO]八面体作为Ni/Cr离子的有利占据位点。使用蓝色芯片制作了一个SWIR pc-LED,作为隐形照明技术、无损光谱分析、防伪和成像应用概念验证。这项工作为能量转移辅助的SWIR增强提供了有效的见解,并提出了一种热稳定性强的Cr-Ni共掺杂磷光体,用于设计未来用于光谱应用的微型SWIR pc-LED。