Yao Zhentao, Wang Manzhuo, Zhang Yue, Sun Zhaoyang, Sun Xiaoqiang, Wu Yuanda, Zhang Daming
State Key Laboratory of Integrated Optoelectronics, College of Electronic Science & Engineering, Jilin University, No. 2699 Qianjin Street, Changchun 130012, China.
College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China.
Nanomaterials (Basel). 2024 Dec 12;14(24):1991. doi: 10.3390/nano14241991.
A silica waveguide thermo-optic mode switch with small radius bimodal S-bends is demonstrated in this study. The cascaded multimode interference coupler is adopted to implement the E and E mode selective output. The beam propagation method is used in design optimization. Standard CMOS processing of ultraviolet photolithography, chemical vapor deposition, and plasma etching are adopted in fabrication. Detailed characterizations on the prepared switch are performed to confirm the precise fabrication. The measurement results show that within the wavelength range from 1530 to 1575 nm, for the E mode input, the switch exhibits an extinction ratio of ≥13.1 dB and a crosstalk ≤-22.8 dB at an electrical driving power of 284.8 mW, while for the E mode input, the extinction ratio is ≥15.5 dB and the crosstalk is ≤-18.1 dB at an electrical driving power of 282.4 mW. These results prove the feasibility of multimode S-bends in mode switching. The favorable performance of the demonstrated switch promises good potential for on-chip mode routing.
本研究展示了一种具有小半径双模S形弯曲的二氧化硅波导热光模式开关。采用级联多模干涉耦合器实现E模式和E'模式的选择性输出。在设计优化中使用了光束传播法。制造过程采用了紫外光刻、化学气相沉积和等离子体蚀刻等标准CMOS工艺。对制备的开关进行了详细表征以确认精确制造。测量结果表明，在1530至1575nm波长范围内，对于E模式输入，在284.8mW的电驱动功率下，该开关的消光比≥13.1dB，串扰≤ -22.8dB；而对于E'模式输入，在282.4mW的电驱动功率下，消光比≥15.5dB，串扰≤ -18.1dB。这些结果证明了多模S形弯曲在模式切换中的可行性。所展示开关的良好性能为片上模式路由带来了良好的潜力。
