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阳离子组成比和沟道长度对非晶铟镓锌氧化物后端场效应晶体管偏置应力不稳定性的影响。

Cation composition ratio and channel length effects on bias stress instability in amorphous InGaZnO back-end-of-line field-effect transistors.

作者信息

Kim Donguk, Lee Dayeon, Kim Wonjung, Lee Ho Jung, Kim Changwook, Lee Kwang-Hee, Jung Moonil, Yang Jee-Eun, Jang Younjin, Kim Sungjun, Kim Sangwook, Kim Dae Hwan

机构信息

School of Electrical Engineering, Kookmin University, Seoul, 02707, Republic of Korea.

Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Suwon, 16678, Gyeonggi-do, Republic of Korea.

出版信息

Sci Rep. 2024 Dec 28;14(1):30873. doi: 10.1038/s41598-024-81556-y.

DOI:10.1038/s41598-024-81556-y
PMID:39730544
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11680911/
Abstract

This study optimizes V and ΔV in amorphous indium-gallium-zinc-oxide (a-IGZO) field-effect transistors (FETs) by examining the influence of both channel length (L) and Ga composition. It was observed that as the ratio of In: Ga: Zn changed from 1:1:1 to 0.307:0.39:0.303 in the IGZO film, both V and ΔV decreased by 0.1 V at the shortest channel length (L = 0.5 μm). This reduction was attributed to the change in the oxygen concentration in IGZO due to the variation in Ga composition. In addition, as the channel length decreased from 10 μm to 0.5 μm, V decreased by up to 0.7 V, and ΔV decreased by up to 0.4 V. This observation was due to diffusion of oxygen vacancies (V) from the source and drain into the main channel. To provide a comprehensive understanding, we quantitatively modeled the doping concentration of IGZO and the trap density of gate insulator (GI) traps using TCAD simulation based on Ga composition and diffusion of V. Using this approach, we propose a method to optimize the design of a-IGZO FETs with high V and low ΔV in short-channel devices by adjusting the Ga composition.

摘要

本研究通过考察沟道长度（L）和镓成分的影响，对非晶铟镓锌氧化物（a-IGZO）场效应晶体管（FET）中的V和ΔV进行了优化。观察到，在IGZO薄膜中，当In:Ga:Zn的比例从1:1:1变为0.307:0.39:0.303时，在最短沟道长度（L = 0.5μm）下，V和ΔV均降低了0.1V。这种降低归因于由于镓成分变化导致的IGZO中氧浓度的变化。此外，当沟道长度从10μm减小到0.5μm时，V降低了高达0.7V，ΔV降低了高达0.4V。这一观察结果是由于氧空位（V）从源极和漏极扩散到主沟道中。为了提供全面的理解，我们基于镓成分和V的扩散，使用TCAD模拟对IGZO的掺杂浓度和栅极绝缘体（GI）陷阱的陷阱密度进行了定量建模。使用这种方法，我们提出了一种通过调整镓成分来优化短沟道器件中具有高V和低ΔV的a-IGZO FET设计的方法。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/78f8/11680911/f84dd430a106/41598_2024_81556_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/78f8/11680911/216b29ab276c/41598_2024_81556_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/78f8/11680911/42e7f23a8b7e/41598_2024_81556_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/78f8/11680911/0138764ded94/41598_2024_81556_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/78f8/11680911/45e912317849/41598_2024_81556_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/78f8/11680911/f84dd430a106/41598_2024_81556_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/78f8/11680911/216b29ab276c/41598_2024_81556_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/78f8/11680911/42e7f23a8b7e/41598_2024_81556_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/78f8/11680911/0138764ded94/41598_2024_81556_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/78f8/11680911/45e912317849/41598_2024_81556_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/78f8/11680911/f84dd430a106/41598_2024_81556_Fig6_HTML.jpg

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本文引用的文献

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Multifunctional Oxygen Scavenger Layer for High-Performance Oxide Thin-Film Transistors with Low-Temperature Processing.用于低温处理的高性能氧化物薄膜晶体管的多功能氧清除层
ACS Appl Mater Interfaces. 2021 Jul 14;13(27):31816-31824. doi: 10.1021/acsami.1c05565. Epub 2021 Jun 28.
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Effect of Oxygen Content on Current Stress-Induced Instability in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors.
氧含量对底部栅极非晶铟镓锌氧化物薄膜晶体管中电流应力诱导不稳定性的影响
Materials (Basel). 2019 Sep 26;12(19):3149. doi: 10.3390/ma12193149.
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