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太赫兹光激发单层石墨烯/二硫化钼异质结构中电荷分离的饱和吸收

Terahertz Saturable Absorption across Charge Separation in Photoexcited Monolayer Graphene/MoS Heterostructure.

作者信息

Xi Qi, Yang Jin, Xie Jiafeng, Wang Xinyao, Xu Feihong, Li Qi, Zhang Kai, Wang Tianwu, Su Fuhai

机构信息

Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China.

University of Science and Technology of China, Hefei 230026, China.

出版信息

J Phys Chem Lett. 2025 Jan 16;16(2):553-560. doi: 10.1021/acs.jpclett.4c03138. Epub 2025 Jan 6.

Abstract

Unveiling the nonlinear interactions between terahertz (THz) electromagnetic waves and free carriers in two-dimensional materials is crucial for the development of high-field and high-frequency electronic devices. Herein, we investigate THz nonlinear transport dynamics in a monolayer graphene/MoS heterostructure using time-resolved THz spectroscopy with intense THz pulses as the probe. Following ultrafast photoexcitation, the interfacial charge transfer establishes a nonequilibrium carrier redistribution, leaving free holes in the graphene and trapping electrons in the MoS. When probed with intense THz pulses exceeding 34 kV/cm in a peak electric field, significant THz saturable absorption is observed over a period of 20 ps. Furthermore, the photoinduced change in the transmitted THz waveform, linked to the THz-driven nonlinear current, manifests as a substantial self-phase modulation. These nonlinear responses can be attributed to the competition between rapid carrier heating and slow carrier cooling via electron-electron and electron-phonon scattering in the charge-transfer-induced hole system of the graphene layer. This work demonstrates an integration of advantages arising from robust nonlinear absorption in graphene and enhanced photocarrier harvesting in transition metal dichalcogenides by exploiting heterostructure construction.

摘要

揭示太赫兹(THz)电磁波与二维材料中自由载流子之间的非线性相互作用对于高场和高频电子器件的发展至关重要。在此,我们使用以强太赫兹脉冲作为探针的时间分辨太赫兹光谱,研究单层石墨烯/MoS异质结构中的太赫兹非线性输运动力学。超快光激发后,界面电荷转移建立了非平衡载流子再分布,在石墨烯中留下自由空穴,并在MoS中捕获电子。当用峰值电场超过34 kV/cm的强太赫兹脉冲探测时,在20 ps的时间段内观察到显著的太赫兹饱和吸收。此外,与太赫兹驱动的非线性电流相关的透射太赫兹波形的光致变化表现为明显的自相位调制。这些非线性响应可归因于在石墨烯层的电荷转移诱导空穴系统中,通过电子-电子和电子-声子散射实现的快速载流子加热与缓慢载流子冷却之间的竞争。这项工作通过利用异质结构构建,展示了石墨烯中强大的非线性吸收与过渡金属二硫属化物中增强的光载流子俘获所带来的优势的整合。

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