Shen Yipeng, Chen Jianan, Si Yuhan, Xiao Zhengguo, Kang Kai, Tang Zhaobing, Wang Jing, Xiang Chaoyu
Laboratory of Optoelectronic and Information Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
Nano Science and Technology Institute, University of Science and Technology of China, Hefei 230026, China.
Materials (Basel). 2024 Dec 11;17(24):6059. doi: 10.3390/ma17246059.
Tin-based perovskite has emerged as an excellent luminescent material due to its non-toxicity and narrow bandgap compared to lead-based perovskite. However, its tin ions are easily oxidized by oxygen, which leads to increased vacancy defects and poor crystallinity, presenting a significant challenge in obtaining high-quality perovskite films. In this context, we introduced an approach by synergistically adding SnF and tin powder into the precursor solution to enhance the antioxidation of Sn ions. This method effectively improved the crystallinity of the perovskite films, reduced the density of defect states, and enhanced the photoluminescence performance of the films. Based on these findings, we successfully fabricated tin-based near-infrared perovskite light-emitting diodes (PeLEDs). With a 20% improvement in the Sn content in the film, we achieved a threefold increase in the external quantum efficiency of the devices, reaching 3.6%.
与铅基钙钛矿相比，锡基钙钛矿因其无毒且带隙窄而成为一种优异的发光材料。然而，其锡离子容易被氧气氧化，这导致空位缺陷增加且结晶度差，在获得高质量钙钛矿薄膜方面面临重大挑战。在此背景下，我们引入了一种方法，即通过在前驱体溶液中协同添加SnF和锡粉来增强Sn离子的抗氧化性。该方法有效提高了钙钛矿薄膜的结晶度，降低了缺陷态密度，并增强了薄膜的光致发光性能。基于这些发现，我们成功制备了锡基近红外钙钛矿发光二极管（PeLEDs）。通过将薄膜中的Sn含量提高20%，我们使器件的外量子效率提高了两倍，达到了3.6%。
