Zhang Tengfei, Wei Shenjin, Song Xiaoxiao, Zhang Shubo, Li Yaopeng, Zou Yiyun, Wang Ying, Li Menghan, Jiang Ying, Wang Junhua, Hu Ertao, Li Jing
Department of Optical Science and Engineering, Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, China.
Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200438, China.
Materials (Basel). 2024 Dec 22;17(24):6281. doi: 10.3390/ma17246281.
In recent years, the fabrication of materials with large nonlinear optical coefficients and the investigation of methods to enhance nonlinear optical performance have been in the spotlight. Herein, the bismuth telluride (BiTe) thin films were prepared by radio-frequency magnetron sputtering and annealed in vacuum at various temperatures. The structural and optical properties were characterized and analyzed using X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, spectroscopic ellipsometry, and UV/VIS/NIR spectrophotometry. The third-order optical nonlinearities of BiTe thin films were investigated using the Z-scan technique, employing a 100 fs pulse width at an 800 nm wavelength. It is found that the crystallinity and the average grain size of the films increase with the annealing temperature. Meanwhile, the extinction coefficient of the annealed films increased, accompanied by a redshift in the optical bandgap. All samples exhibit pronounced saturable absorption and self-focusing behaviors. The nonlinear absorption coefficient and nonlinear refractive index of BiTe films annealed at 300 °C were found to be 2.44 times and 1.85 times higher than those of the as-deposited films, respectively. These findings demonstrate that annealing treatment is an effective approach to tuning the crystalline structure and linear optical properties of BiTe films while simultaneously enhancing their nonlinear optical performance.
近年来,具有大非线性光学系数的材料制备以及增强非线性光学性能方法的研究备受关注。在此,通过射频磁控溅射制备碲化铋(BiTe)薄膜,并在真空中于不同温度下进行退火处理。使用X射线衍射、扫描电子显微镜、X射线光电子能谱、光谱椭偏仪和紫外/可见/近红外分光光度法对其结构和光学性质进行表征与分析。采用Z扫描技术,在800nm波长下使用100fs脉冲宽度研究BiTe薄膜的三阶光学非线性。结果发现,薄膜的结晶度和平均晶粒尺寸随退火温度升高而增加。同时,退火薄膜的消光系数增大,且光学带隙发生红移。所有样品均表现出明显的饱和吸收和自聚焦行为。发现300℃退火的BiTe薄膜的非线性吸收系数和非线性折射率分别比沉积态薄膜高2.44倍和1.85倍。这些结果表明,退火处理是一种有效方法,可调控BiTe薄膜的晶体结构和线性光学性质,同时增强其非线性光学性能。