Peng Shuijiao, Chen Minzhi, Wu Meijing, Liu Zhonghua, Tang Dongfang, Zhou Xi
The National and Local Joint Engineering Laboratory of Animal Peptide Drug Development, College of Life Sciences, Hunan Normal University, Changsha, 410081, Hunan, China; Hunan Provincial Center for Disease Control and Prevention, Hunan Provincial Key Laboratory of Microbial Molecular Biology, Changsha 410000, Hunan, China.
The National and Local Joint Engineering Laboratory of Animal Peptide Drug Development, College of Life Sciences, Hunan Normal University, Changsha, 410081, Hunan, China; Peptide and small molecule drug R&D platform, Furong Laboratory, Hunan Normal University, Changsha 410081, Hunan, China; Institute of Interdisciplinary Studies, Hunan Normal University, Changsha 410081, Hunan, China.
Biochim Biophys Acta Gen Subj. 2025 Mar;1869(3):130762. doi: 10.1016/j.bbagen.2025.130762. Epub 2025 Jan 10.
The gating process of voltage-gated sodium (Na) channels is extraordinary intrinsic and involves numerous factors, such as voltage-sensing domain (VSD), the N-terminus and C-terminus, and the auxiliary subunits. To date, the gating mechanism of Na channel has not been clearly elucidated. Na1.9 has garnered significant attention due to its slow gating kinetics. Due to the challenges of Na1.9 heterologous expression, research on its gating mechanism is relatively limited. Whether there are any differences in the functions of the four VSDs in Na1.9 compared to those in other subtypes remains an open question. Here, we employed the established chimera method to transplant the S3b-S4 motif from the VSDIV of the toxin-sensitive donor channel (Na1.9) into the receptor channel (Na1.9/1.8 DIV S3b-S4 chimera). This modification imparted animal toxin sensitivity to the other three VSDs. Our results demonstrate that all four VSDs of Na1.9 are involved in channel opening, VSDIII and VSDIV are primarily involved in regulating fast inactivation, and VSDII also regulates the steady-state inactivation of channels. These findings provide a new insight into the gating mechanism of Na1.9.
电压门控钠(Na)通道的门控过程具有非凡的内在特性,涉及众多因素,如电压感应结构域(VSD)、N 端和 C 端以及辅助亚基。迄今为止,Na 通道的门控机制尚未得到明确阐释。Na1.9 因其缓慢的门控动力学而备受关注。由于 Na1.9 异源表达的挑战,对其门控机制的研究相对有限。与其他亚型相比,Na1.9 中四个 VSD 的功能是否存在差异仍是一个悬而未决的问题。在此,我们采用已建立的嵌合体方法,将毒素敏感供体通道(Na1.9)的 VSDIV 的 S3b - S4 基序移植到受体通道(Na1.9/1.8 DIV S3b - S4 嵌合体)中。这种修饰赋予了其他三个 VSD 动物毒素敏感性。我们的结果表明,Na1.9 的所有四个 VSD 都参与通道开放,VSDIII 和 VSDIV 主要参与调节快速失活,VSDII 也调节通道的稳态失活。这些发现为 Na1.9 的门控机制提供了新的见解。