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ω-芋螺毒素-SIA 抑制电压门控钠通道电流。

ω-Grammotoxin-SIA inhibits voltage-gated Na+ channel currents.

机构信息

Department of Basic and Applied Medical Sciences, Molecular Physiology and Neurophysics Group, Ghent University, Ghent, Belgium.

Department of Biochemistry and Molecular Biology, University of British Columbia, Vancouver, Canada.

出版信息

J Gen Physiol. 2024 Oct 7;156(10). doi: 10.1085/jgp.202413563. Epub 2024 Jul 23.

Abstract

ω-Grammotoxin-SIA (GrTX-SIA) was originally isolated from the venom of the Chilean rose tarantula and demonstrated to function as a gating modifier of voltage-gated Ca2+ (CaV) channels. Later experiments revealed that GrTX-SIA could also inhibit voltage-gated K+ (KV) channel currents via a similar mechanism of action that involved binding to a conserved S3-S4 region in the voltage-sensing domains (VSDs). Since voltage-gated Na+ (NaV) channels contain homologous structural motifs, we hypothesized that GrTX-SIA could inhibit members of this ion channel family as well. Here, we show that GrTX-SIA can indeed impede the gating process of multiple NaV channel subtypes with NaV1.6 being the most susceptible target. Moreover, molecular docking of GrTX-SIA onto NaV1.6, supported by a p.E1607K mutation, revealed the voltage sensor in domain IV (VSDIV) as being a primary site of action. The biphasic manner in which current inhibition appeared to occur suggested a second, possibly lower-sensitivity binding locus, which was identified as VSDII by using KV2.1/NaV1.6 chimeric voltage-sensor constructs. Subsequently, the NaV1.6p.E782K/p.E838K (VSDII), NaV1.6p.E1607K (VSDIV), and particularly the combined VSDII/VSDIV mutant lost virtually all susceptibility to GrTX-SIA. Together with existing literature, our data suggest that GrTX-SIA recognizes modules in NaV channel VSDs that are conserved among ion channel families, thereby allowing it to act as a comprehensive ion channel gating modifier peptide.

摘要

ω-芋螺毒素-SIA(GrTX-SIA)最初从智利玫瑰狼蛛的毒液中分离出来,被证明可以作为电压门控 Ca2+(CaV)通道的门控调节剂发挥作用。后来的实验表明,GrTX-SIA 还可以通过一种类似的作用机制抑制电压门控 K+(KV)通道电流,该机制涉及与电压感应域(VSD)中的保守 S3-S4 区域结合。由于电压门控 Na+(NaV)通道包含同源结构基序,我们假设 GrTX-SIA 也可以抑制该离子通道家族的成员。在这里,我们表明 GrTX-SIA 确实可以阻碍多种 NaV 通道亚型的门控过程,其中 NaV1.6 是最易受影响的靶标。此外,GrTX-SIA 与 NaV1.6 的分子对接,得到支持的 p.E1607K 突变,表明 IV 域(VSDIV)的电压传感器是主要作用部位。电流抑制似乎以双相方式发生,这表明存在第二个可能的低敏感性结合位点,该位点通过使用 KV2.1/NaV1.6 嵌合电压传感器构建体被鉴定为 VSDII。随后,NaV1.6p.E782K/p.E838K(VSDII)、NaV1.6p.E1607K(VSDIV),特别是组合的 VSDII/VSDIV 突变体几乎失去了对 GrTX-SIA 的所有敏感性。结合现有文献,我们的数据表明,GrTX-SIA 识别 NaV 通道 VSD 中的模块,这些模块在离子通道家族中是保守的,从而使其能够作为一种全面的离子通道门控调节剂肽。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/de3b/11270453/1fe51925083f/JGP_202413563_FigS1.jpg

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