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富含电子的七环S,N杂并苯可实现具有C形A-D-A型电子受体的高灵敏度近红外光电探测器,其光电响应超过1000纳米。

Electron-Rich Heptacyclic S,N Heteroacene Enabling C-Shaped A-D-A-type Electron Acceptors With Photoelectric Response beyond 1000 Nm for Highly Sensitive Near-Infrared Photodetectors.

作者信息

Huang Kuo-Hsiu, Jiang Bing-Huang, Lu Han-Cheng, Xue Yung-Jing, Lu Chia-Fang, Chang Yung-Yung, Huang Ching-Li, Chien Su-Ying, Chen Chih-Ping, Cheng Yen-Ju

机构信息

Department of Applied Chemistry, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.

Department of Materials Engineering, Ming Chi University of Technology, New Taipei City, 243303, Taiwan.

出版信息

Adv Sci (Weinh). 2025 Mar;12(9):e2413045. doi: 10.1002/advs.202413045. Epub 2025 Jan 14.

Abstract

A highly electron-rich S,N heteroacene building block is developed and condensed with FIC and Cl-IC acceptors to furnish CT-F and CT-Cl, which exhibit near-infrared (NIR) absorption beyond 1000 nm. The C-shaped CT-F and CT-Cl self-assemble into a highly ordered 3D intermolecular packing network via multiple π-π interactions in the single crystal structures. The CT-F-based organic photovoltaic (OPV) achieved an impressive efficiency of 14.30% with a broad external quantum efficiency response extending from the UV-vis to the NIR (300-1050 nm) regions, outperforming most binary OPVs employing NIR A-D-A-type acceptors. CT-Cl possesses a higher surface energy than CT-F, promoting vertical phase segregation and resulting in its preferential accumulation near the bottom interface of the blend. This arrangement, combined with the lower HOMO energy level of CT-Cl, effectively reduces undesired hole and electron injection under reverse voltage. The PM6:CT-Cl-based organic photodetectors (OPDs) devices achieved an ultra-high shot-noise-limited specific detectivity (D*) values exceeding 10 Jones in the NIR region from 620 to 1000 nm, reaching an unprecedentedly high value of 1.3 × 10 Jones at 950 nm. When utilizing a 780 nm light source, the PM6:CT-Cl-based OPDs show record-high rise/fall times of 0.33/0.11 µs and an exceptional cut-off frequency (f) of 590 kHz at -1 V.

摘要

开发了一种高度富电子的S,N杂并苯结构单元,并将其与FIC和Cl-IC受体缩合,得到CT-F和CT-Cl,它们在1000 nm以上表现出近红外(NIR)吸收。在单晶结构中,C形的CT-F和CT-Cl通过多个π-π相互作用自组装成高度有序的三维分子间堆积网络。基于CT-F的有机光伏(OPV)器件实现了14.30%的令人印象深刻的效率,具有从紫外-可见到近红外(300-1050 nm)区域的宽外部量子效率响应,优于大多数采用近红外A-D-A型受体的二元OPV器件。CT-Cl比CT-F具有更高的表面能,促进垂直相分离,导致其在共混物底部界面附近优先积累。这种排列方式,结合CT-Cl较低的最高占据分子轨道(HOMO)能级,有效地降低了反向电压下不希望的空穴和电子注入。基于PM6:CT-Cl的有机光电探测器(OPD)器件在620至1000 nm的近红外区域实现了超过10 Jones的超高散粒噪声限制比探测率(D*)值,在950 nm处达到了前所未有的1.3×10 Jones的高值。当使用780 nm光源时,基于PM6:CT-Cl的OPD器件在-1 V时显示出创纪录的0.33/0.11 µs的上升/下降时间和590 kHz的出色截止频率(f)。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a856/11884573/fe827e44d5fe/ADVS-12-2413045-g004.jpg

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