Liu Heguang, Dang Jiarou, Lei Chao, Zhu Zhanglin, Li Xiaolian, Ding Haoyue, Tian Na, You Caiyin, Yang Yang
School of Materials Science and Engineering, Xi'an University of Technology, Xi'an, 710048, China.
NanoScience Technology Center, Department of Materials Science and Engineering, Department of Chemistry, Renewable Energy and Chemical Transformation Cluster, The Stephen W. Hawking Center for Microgravity Research and Education, University of Central Florida, Orlando, FL, 32826, USA.
Small. 2025 Jan 16:e2410937. doi: 10.1002/smll.202410937.
Since the explosive growth of state-of-the-art electronics and devices raises concerns about electromagnetic pollution, exploring novel and efficient electromagnetic interference (EMI) shielding materials is desirable and crucial. TiCT MXenes hold significant EMI shielding potential due to their inherent characteristics, including lightweight, metal-like conductivities, unique layered structure, and facile processing. Nonetheless, it remains challenging to fabricate TiCT MXenes-based EMI shielding materials with efficient shielding capability and low reflection. Herein, an interface modulating strategy is designed to fabricate Ni-embedded hollow porous TiCT MXene film. Benefiting from this strategy, the impedance matching is enhanced and the magnetic loss is simultaneously introduced. The multiple reflections, Ohmic loss, magnetic loss, and interfacial polarization concurrently contribute to the EMI shielding mechanism of the film. Accordingly, the film delivers an impressive EMI shielding effectiveness (SE) of 70.7 dB at a thickness of ≈55 µm, whilst the average reflection effectiveness (SE) is only 17.4 dB. The specific EMI shielding effectiveness (SSE/t) is as high as 35126 dB∙cm∙g. This study demonstrates a novel and effective routine for constructing EMI shielding materials with superior shielding capability and minimal reflection.
由于先进电子设备的迅猛发展引发了对电磁污染的担忧，探索新型高效的电磁干扰（EMI）屏蔽材料既必要又关键。TiCT MXenes因其固有特性，包括轻质、类金属导电性、独特的层状结构以及易于加工等，具有显著的EMI屏蔽潜力。然而，制备具有高效屏蔽能力和低反射率的基于TiCT MXenes的EMI屏蔽材料仍然具有挑战性。在此，设计了一种界面调制策略来制备嵌入镍的中空多孔TiCT MXene薄膜。受益于该策略，阻抗匹配得到增强，同时引入了磁损耗。多次反射、欧姆损耗、磁损耗和界面极化共同促成了该薄膜的EMI屏蔽机制。因此，该薄膜在厚度约为55 µm时具有令人印象深刻的70.7 dB的EMI屏蔽效能（SE），而平均反射效能（SE）仅为17.4 dB。比EMI屏蔽效能（SSE/t）高达35126 dB∙cm∙g。本研究展示了一种构建具有卓越屏蔽能力和最小反射的EMI屏蔽材料的新颖有效方法。
