Li Zhiqi, Wei Qi, Wang Yu, Tao Cong, Zou Yatao, Liu Xiaowang, Li Ziwei, Wu Zhongbin, Li Mingjie, Guo Wenbin, Li Gang, Xu Weidong, Gao Feng
Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, Sweden.
Department of Electrical and Electronic Engineering, Photonic Research Institute (PRI), Research Institute of Smart Energy (RISE), The Hong Kong Polytechnic University, Hong Kong, China.
Nat Commun. 2025 Jan 22;16(1):927. doi: 10.1038/s41467-025-56001-x.
One of the key advantages of perovskite light-emitting diodes (PeLEDs) is their potential to achieve high performance at much higher current densities compared to conventional solution-processed emitters. However, state-of-the-art PeLEDs have not yet reached this potential, often suffering from severe current-efficiency roll-off under intensive electrical excitations. Here, we demonstrate bright PeLEDs, with a peak radiance of 2409 W sr m and negligible current-efficiency roll-off, maintaining high external quantum efficiency over 20% even at current densities as high as 2270 mA cm. This significant improvement is achieved through the incorporation of electron-withdrawing trifluoroacetate anions into three-dimensional perovskite emitters, resulting in retarded Auger recombination due to a decoupled electron-hole wavefunction. Trifluoroacetate anions can additionally alter the crystallization dynamics and inhibit halide migration, facilitating charge injection balance and improving the tolerance of perovskites under high voltages. Our findings shed light on a promising future for perovskite emitters in high-power light-emitting applications, including laser diodes.
钙钛矿发光二极管（PeLEDs）的关键优势之一在于，与传统溶液处理的发光体相比，它们有潜力在高得多的电流密度下实现高性能。然而，目前最先进的PeLEDs尚未发挥出这种潜力，在强电激发下常常遭受严重的电流效率滚降。在此，我们展示了明亮的PeLEDs，其峰值辐射亮度为2409 W sr m，电流效率滚降可忽略不计，即使在高达2270 mA cm的电流密度下，仍保持超过20%的高外量子效率。通过将吸电子的三氟乙酸根阴离子引入三维钙钛矿发光体，实现了这一显著改进，由于电子 - 空穴波函数解耦，使得俄歇复合受到抑制。三氟乙酸根阴离子还可以改变结晶动力学并抑制卤化物迁移，促进电荷注入平衡，提高钙钛矿在高电压下的耐受性。我们的研究结果为钙钛矿发光体在包括激光二极管在内的高功率发光应用中的光明未来提供了线索。
