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Enhanced Spontaneous Emission Rate and Luminescence Intensity of CsPbBr Quantum Dots Using a High- Microdisk Cavity.

作者信息

Yuan Yu, Qian Chenjiang, Sun Shipei, Lei Yuechen, Yang Jingnan, Yang Longlong, Fu Bowen, Yan Sai, Zhu Rui, Li Hancong, Chen Xiqing, Zuo Zhanchun, Li Bei-Bei, Xiao Yun-Feng, Zhong Haizheng, Wang Can, Jin Kuijuan, Gong Qihuang, Xu Xiulai

机构信息

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.

School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China.

出版信息

J Phys Chem Lett. 2025 Jan 30;16(4):1095-1102. doi: 10.1021/acs.jpclett.4c03615. Epub 2025 Jan 22.

DOI:10.1021/acs.jpclett.4c03615
PMID:39844533
Abstract

Perovskite quantum dots (QDs) are high-efficiency optoelectronic materials attracting great interest, but further improvement in the luminescence efficiency is crucial for their application. In this work, we enhance both the spontaneous emission rate and the photoluminescence (PL) intensity of CsPbBr QDs by coupling them to a high quality () factor SiO microdisk cavity. Compared to conventional metal plasmonic cavities, the dielectric cavity structure suppresses the effects of quenching and energy transfer, which could introduce complex fluctuations and nonradiative decays. As such, we obtain a 5.9-fold enhancement of the PL intensity and a 5.6-fold enhancement of the emission rate. Moreover, the different enhancement behaviors for phonon sidebands allow us to further explore the different components in the broad emission peak of ensembled QDs. These results demonstrate the great potential of microdisk cavities in enhancing the luminescence in optoelectronic devices and exploring the exciton-photophysics of perovskite QDs.

摘要

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