Vázquez-González Perla J, Paniagua-Chávez Martha L, Zebadua-Chavarria Lizette A, Mota-Grajales Rafael, Meza-Avendaño C A, Campos-González Enrique, Escobosa-Echavarría A, Hu Yaoqiao, Pérez-Ramos Aldo E, Hernández-Gutiérrez Carlos A
Tecnológico Nacional de México Campus Tuxtla, Carretera Panamericana Km 1080, Tuxtla Gutiérrez C.P. 29050, Mexico.
Programa de Nanociencias y Nanotecnología, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Av. Instituto Politécnico Nacional 2508, México City C.P. 07360, Mexico.
Nanomaterials (Basel). 2025 Jan 8;15(2):85. doi: 10.3390/nano15020085.
This study provides a comprehensive structural, chemical, and optical characterization of CZTS thin films deposited on flexible Kapton substrates via the Successive Ionic Layer Adsorption and Reaction (SILAR) method. The investigation explored the effects of varying deposition cycles (40, 60, 70, and 80) and annealing treatments on the films. An X-ray diffraction (XRD) analysis demonstrated enhanced crystallinity and phase purity, particularly in films deposited with 70 cycles. These films exhibited a notable reduction in secondary phases in the as-deposited state, with further improvements observed after annealing at 400 °C and 450 °C in a sulfur atmosphere. A pole figure analysis indicates a decrease in texture disorder with annealing, suggesting improved crystalline orientation at higher temperatures. Field emission scanning electron microscopy (FE-SEM) showed enhancements in surface morphology, with increased grain size and uniformity post-annealing. Chemical uniformity was confirmed through Secondary Ion Mass Spectrometry (SIMS), Energy-Dispersive Spectroscopy (EDS), and X-ray Photoelectron Spectroscopy (XPS). XPS revealed the presence of CZTS phases alongside oxidized phases. Annealing effectively reduced secondary phases, such as ZnO, SnO, CuO, and SO, enhancing the CZTS phase. An optical analysis demonstrated that annealing at 200 °C in an air atmosphere reduced the band gap from 1.53 eV to 1.38 eV. In contrast, annealing at 400 °C and 450 °C in a sulfur atmosphere increased the band gap to 1.59 eV and 1.63 eV, respectively. The films exhibited p-type conductivity, as inferred from a valence band structure analysis. Density Functional Theory (DFT) calculations provided insights into the observed band gap variations, further substantiating the findings.
本研究对通过连续离子层吸附与反应(SILAR)法沉积在柔性聚酰亚胺(Kapton)衬底上的CZTS薄膜进行了全面的结构、化学和光学表征。该研究探讨了不同沉积循环次数(40、60、70和80)以及退火处理对薄膜的影响。X射线衍射(XRD)分析表明,结晶度和相纯度有所提高,尤其是在沉积70次循环的薄膜中。这些薄膜在沉积态时次生相显著减少,在400℃和450℃硫气氛中退火后有进一步改善。极图分析表明,退火后织构无序度降低,表明在较高温度下晶体取向得到改善。场发射扫描电子显微镜(FE-SEM)显示表面形貌有所改善,退火后晶粒尺寸增大且均匀性提高。通过二次离子质谱(SIMS)、能量色散光谱(EDS)和X射线光电子能谱(XPS)证实了化学均匀性。XPS显示除了CZTS相外还存在氧化相。退火有效减少了次生相,如ZnO、SnO、CuO和SO,增强了CZTS相。光学分析表明,在空气气氛中200℃退火使带隙从1.53 eV降低到1.38 eV。相反,在硫气氛中400℃和450℃退火分别使带隙增加到1.59 eV和1.63 eV。从价带结构分析推断,这些薄膜表现出p型导电性。密度泛函理论(DFT)计算为观察到的带隙变化提供了深入见解,进一步证实了研究结果。