Kwak Woojin, Kim Raeyoon, Lee Jinhee, Park Heonsoo, Ha Jaeyun, Choi Jinsub
Department of Chemistry and Chemical Engineering, Inha University, Incheon 22212, Republic of Korea.
Daejoo Electronic Materials Co., Ltd, 148 Seohaean-Ro, Siheung-Si, Gyeonggi-Do 429-848, Republic of Korea.
ACS Omega. 2025 Jan 13;10(3):2553-2560. doi: 10.1021/acsomega.4c06951. eCollection 2025 Jan 28.
Owing to the surge in the demand for lithium-ion batteries (LIBs) with high energy density, silicon suboxide (SiO )-based materials with impressive theoretical capacities have garnered significant attention. However, challenges such as poor electrical conductivity and substantial volume expansion must be overcome. A common strategy for addressing these issues involves coating SiO with carbon. During this process, the properties of the carbon layer and SiO are strongly affected by the temperature and precursor choice. This study explores the impact of the temperature and precursor selection on the carbon coating layer deposited by chemical vapor deposition (CVD) and the phase of SiO . Surprisingly, SiO @CH, in which SiO was coated with carbon using acetylene at low temperatures, exhibited lower cyclic stability than the uncoated SiO . In contrast, SiO @CH, in which SiO was coated with carbon at high temperatures, comprised a vertically grown carbon layer and SiO layer with optimal thickness. This configuration stabilized the growth of the solid electrolyte interphase (SEI) layer and enhanced the electrical contact. The optimized SiO @CH-1000 (methane-based CVD coating at 1000 °C) demonstrated excellent electrochemical performance, achieving a high capacity of 778 mAh g at 0.75 A g and a remarkable capacity retention of 92.8% after 100 cycles. This optimized CVD carbon coating process paves the way for industrialization of SiO -based materials, positioning them for application in next-generation LIBs.
由于对高能量密度锂离子电池（LIBs）的需求激增，具有令人印象深刻理论容量的亚氧化硅（SiO ）基材料受到了广泛关注。然而，必须克服诸如电导率差和大量体积膨胀等挑战。解决这些问题的一个常见策略是用碳包覆SiO 。在此过程中，碳层和SiO 的性能受到温度和前驱体选择的强烈影响。本研究探讨了温度和前驱体选择对通过化学气相沉积（CVD）沉积的碳包覆层以及SiO 相的影响。令人惊讶的是，在低温下使用乙炔对SiO 进行碳包覆得到的SiO @CH，其循环稳定性比未包覆的SiO 更低。相比之下，在高温下对SiO 进行碳包覆得到的SiO @CH，包含垂直生长的碳层和具有最佳厚度的SiO层。这种结构稳定了固体电解质界面（SEI）层的生长并增强了电接触。优化后的SiO @CH-1000（在1000℃下基于甲烷的CVD包覆）表现出优异的电化学性能，在0.75 A g下实现了778 mAh g的高容量，并且在100次循环后具有92.8%的显著容量保持率。这种优化的CVD碳包覆工艺为SiO 基材料的工业化铺平了道路，使其能够应用于下一代LIBs。
