Dai Xingze, Xu Yongkang, Deng Yafeng, Zhang Xiaolong, Liu Tianyu, Zhuang Wenzhuo, Liu Yu, Wang Xinyue, Lu Jiahua, Feng Guanqun, Wang Shuanghai, He Kun, Wang Xuefeng, Li Yao, Xu Yongbing, Du Jun, He Liang
School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China.
National Key Laboratory of Spintronics, Nanjing University, Suzhou 215163, China.
J Phys Chem Lett. 2025 Feb 20;16(7):1694-1701. doi: 10.1021/acs.jpclett.4c03337. Epub 2025 Feb 10.
Chiral magnets have recently gained recognition as ideal hosts for topological spin textures, showing significant promise for applications in next-generation spintronic devices. However, chiral magnets are still scarce, and their transport properties have been rarely explored. Here, a chiral magnet, CrNbS, has been synthesized, and its magnetic and transport properties have been systematically investigated. A high magnetoresistance sensitivity of 52.5%/T is achieved, and a magnetic phase diagram of chiral helimagnetic (CHM), chiral soliton lattice (CSL), and forced ferromagnetic (FFM) states has been mapped out. Notably, the anisotropic magnetoresistance (AMR) sign changes from positive to negative with increasing magnetic field due to the evolution of chiral magnetic textures when a large out-of-plane magnetic field component is present. Furthermore, a planar Hall effect comparable to that found in topological semimetals has been observed. Our findings provide a theoretical foundation for the development of future magnetic devices.
手性磁体最近已被公认为是拓扑自旋纹理的理想宿主，在下一代自旋电子器件应用中显示出巨大潜力。然而，手性磁体仍然稀缺，其输运性质也很少被研究。在此，合成了一种手性磁体CrNbS，并对其磁性和输运性质进行了系统研究。实现了52.5%/T的高磁阻灵敏度，并绘制了手性螺旋磁体（CHM）、手性孤子晶格（CSL）和强制铁磁（FFM）态的磁相图。值得注意的是，当存在较大的面外磁场分量时，由于手性磁纹理的演变，各向异性磁阻（AMR）符号随磁场增加从正变为负。此外，还观察到了与拓扑半金属中相当的平面霍尔效应。我们的发现为未来磁性器件的发展提供了理论基础。
