Bieker Sebastian, Timme Michael, Woge Nils, Hassan Dina G, Brown Chelsea M, Marrink Siewert J, Melo Manuel N, Holthuis Joost C M
Molecular Cell Biology Division, Department of Biology/Chemistry, University of Osnabrück, 49076, Osnabrück, Germany.
Center for Cellular Nanoanalytics, Osnabrück University, Artilleriestraße 77, 49076, Osnabrück, Germany.
Commun Biol. 2025 Feb 10;8(1):212. doi: 10.1038/s42003-025-07551-9.
Binding of hexokinase HKI to mitochondrial voltage-dependent anion channels (VDACs) has far-reaching physiological implications. However, the structural basis of this interaction is unclear. Combining computer simulations with experiments in cells, we here show that complex assembly relies on intimate contacts between the N-terminal α-helix of HKI and a charged membrane-buried glutamate on the outer wall of VDAC1 and VDAC2. Protonation of this residue blocks complex formation in silico while acidification of the cytosol causes a reversable release of HKI from mitochondria. Membrane insertion of HKI occurs adjacent to the bilayer-facing glutamate where a pair of polar channel residues mediates a marked thinning of the cytosolic leaflet. Disrupting the membrane thinning capacity of VDAC1 dramatically impairs its ability to bind HKI in silico and in cells. Our data reveal key topological and mechanistic insights into HKI-VDAC complex assembly that may benefit the development of therapeutics to counter pathogenic imbalances in this process.
己糖激酶HKI与线粒体电压依赖性阴离子通道(VDAC)的结合具有深远的生理意义。然而,这种相互作用的结构基础尚不清楚。通过将计算机模拟与细胞实验相结合,我们在此表明复合物的组装依赖于HKI的N端α螺旋与VDAC1和VDAC2外壁上带电荷的膜埋谷氨酸之间的紧密接触。该残基的质子化在计算机模拟中阻止复合物形成,而细胞质酸化会导致HKI从线粒体中可逆释放。HKI的膜插入发生在面向双层的谷氨酸附近,一对极性通道残基介导细胞质小叶明显变薄。破坏VDAC1的膜变薄能力会显著损害其在计算机模拟和细胞中结合HKI的能力。我们的数据揭示了HKI-VDAC复合物组装的关键拓扑和机制见解,这可能有助于开发治疗药物来对抗这一过程中的致病性失衡。