Huang Xin, Lado Jose L, Sainio Jani, Liljeroth Peter, Ganguli Somesh Chandra
Aalto University, Department of Applied Physics, FI-00076 Aalto, Finland.
Phys Rev Lett. 2025 Jan 31;134(4):046504. doi: 10.1103/PhysRevLett.134.046504.
The doped Hubbard model is one of the paradigmatic platforms to engineer exotic quantum many-body states, including charge-ordered states, strange metals, and unconventional superconductors. While undoped and doped correlated phases have been experimentally realized in a variety of twisted van der Waals materials, experiments in monolayer materials, and in particular 1T transition metal dichalcogenides, have solely reached the conventional insulating undoped regime. Correlated phases in monolayer two-dimensional materials have much higher associated energy scales than their twisted counterparts, making doped correlated monolayers an attractive platform for high temperature correlated quantum matter. Here, we demonstrate the realization of a doped Mott phase in a van der Waals dichalcogenide 1T-NbSe_{2} monolayer. The system is electron doped due to electron transfer from a monolayer van der Waals substrate via proximity, leading to a correlated triangular lattice with both half-filled and fully filled sites. We analyze the distribution of the half-filled and filled sites and show the arrangement is unlikely to be controlled by disorder alone, and we show that the presence of competing nonlocal many-body correlations would account for the charge correlations found experimentally. Our results establish 1T-NbSe_{2} as a potential monolayer platform to explore correlated doped Mott physics in a frustrated lattice.
掺杂的哈伯德模型是用于构建奇异量子多体态的典型平台之一,这些态包括电荷有序态、奇异金属和非常规超导体。虽然未掺杂和掺杂的关联相已在各种扭曲的范德华材料中通过实验实现,但单层材料中的实验,特别是1T相过渡金属二硫族化物中的实验,仅达到了传统的绝缘未掺杂状态。单层二维材料中的关联相比其扭曲对应物具有高得多的相关能量尺度,这使得掺杂的关联单层成为高温关联量子物质的一个有吸引力的平台。在此,我们展示了在范德华二硫族化物1T-NbSe₂单层中实现了掺杂的莫特相。由于电子通过近邻效应从单层范德华衬底转移,该系统是电子掺杂的,从而形成了一个具有半填充和全填充位点的关联三角晶格。我们分析了半填充和全填充位点的分布,并表明这种排列不太可能仅由无序控制,而且我们表明竞争的非局域多体关联的存在可以解释实验中发现的电荷关联。我们的结果确立了1T-NbSe₂作为一个潜在的单层平台,用于在受挫晶格中探索关联掺杂的莫特物理。