Meng Xin, Niu Xiaoran, Wang Jiawei, Duan Jianan, Xu Xiaochuan, He Feng
Opt Lett. 2025 Mar 1;50(5):1441-1444. doi: 10.1364/OL.549754.
Stimulated Brillouin scattering (SBS) provides a robust and versatile foundation for the development of mode-locked lasers, microwave signal generators, and optical gyroscopes across diverse optical platforms. Nonetheless, the relatively low efficacy of Brillouin interactions in traditional silicon photonic waveguides presents a barrier to the advances of silicon-based Brillouin laser technology. The emergence of hybrid photonic-phononic waveguides has brought to light the robust and adaptable nature of Brillouin interactions in silicon, marking a significant advancement. Here we numerically calculated the SBS gain in the valley Hall photonic-phononic topological insulator (VH-PTI), which confines the phonons in the optical waveguide to achieve light transmission under large-angle bending. Our results show that the SBS gain at 9.101 GHz is G/Q = 14.94 W·m, enhanced by 1.4 times compared to the highest reported value so far. In addition, we realized arbitrary location decoupling on the chip, introducing a topological state into SBS devices. This work provides a way to implement VH-PTI into silicon photonic circuits for Brillouin laser applications.
受激布里渊散射（SBS）为跨多种光学平台的锁模激光器、微波信号发生器和光学陀螺仪的发展提供了一个强大且通用的基础。尽管如此，传统硅光子波导中布里渊相互作用的效率相对较低，这对基于硅的布里渊激光技术的进步构成了障碍。混合光子 - 声子波导的出现揭示了硅中布里渊相互作用的强大和适应性，标志着一项重大进展。在此，我们通过数值计算了谷霍尔光子 - 声子拓扑绝缘体（VH - PTI）中的SBS增益，它将声子限制在光波导中以实现大角度弯曲下的光传输。我们的结果表明，在9.101 GHz时的SBS增益为G/Q = 14.94 W·m，与迄今为止报道的最高值相比提高了1.4倍。此外，我们在芯片上实现了任意位置解耦，将拓扑态引入SBS器件。这项工作为将VH - PTI应用于硅光子电路以实现布里渊激光应用提供了一种方法。
