Fu Yi-Fan, Yao Wen-Dong, Wu Jiajing, Huang Qiao-Feng, Zhang Yu-Mei, Zhou Wenfeng, Liu Wenlong, Guo Sheng-Ping
School of Chemistry and Chemical Engineering, Yangzhou University, 180 Siwangting Road, Yangzhou, 250002, China.
Small. 2025 Mar;21(10):e2412173. doi: 10.1002/smll.202412173. Epub 2025 Jan 26.
The pressing demand for both established and innovative technologies to expand laser wavelengths has rendered high-performance nonlinear optical (NLO) crystals with large optical anisotropy indispensable. Here, centrosymmetric [SHC(NH)]CdBr (1) and pseudo-2D layered [SC(NH)]CdBr (2), as well as pseudo-3D noncentrosymmetric [SC(NH)]CdCl (3) are successfully synthesized through the introduction of π-conjugated SC(NH) groups. Compared to ionic compound 1 containing full-halogen coordination tetrahedra, covalent compounds 2 and 3 featuring novel polar [SC(NH)]CdX (X = Br, Cl) tetrahedral units demonstrate enhanced bandgaps (>4 eV) and birefringences (>0.3@546 nm) due to the unique coordination environment. Remarkably, 3 exhibits a strong second-harmonic generation (SHG) response (2.1 × KHPO(KDP)), high laser-induced damage thresholds (30 × AgGaS(AGS), and excellent water stability. The birefringence of 3 is the largest among the hybrid halides NLO crystals containing d metal cations. Detailed theoretical calculations confirm that such a modified double-site dual functional building units (FBUs) substitution is an effective strategy for designing superior optical materials with large birefringence and strong SHG response, paving the way for the development of high-performance devices in related fields.
对成熟技术和创新技术扩展激光波长的迫切需求,使得具有大光学各向异性的高性能非线性光学(NLO)晶体变得不可或缺。在此,通过引入π共轭的SC(NH)基团,成功合成了中心对称的[SHC(NH)]CdBr(1)、准二维层状的[SC(NH)]CdBr(2)以及准三维非中心对称的[SC(NH)]CdCl(3)。与含有全卤配位四面体的离子化合物1相比,具有新型极性[SC(NH)]CdX(X = Br、Cl)四面体单元的共价化合物2和3,由于独特的配位环境,展现出增强的带隙(>4 eV)和双折射(>0.3@546 nm)。值得注意的是,3表现出强烈的二次谐波产生(SHG)响应(2.1×KHPO(KDP))、高激光诱导损伤阈值(30×AgGaS(AGS))以及优异的水稳定性。3的双折射在含有d金属阳离子的混合卤化物NLO晶体中是最大的。详细的理论计算证实,这种改性的双位点双功能构建单元(FBUs)取代是设计具有大双折射和强SHG响应的优质光学材料的有效策略,为相关领域高性能器件的发展铺平了道路。