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通过3,5-双(三氟甲基)苯硫醇实现双位点钝化耦合内封装用于高效稳定的钙钛矿太阳能电池

Dual-Site Passivation Coupling Internal Encapsulation via 3,5-Bis(trifluoromethyl)benzenethiol for Efficient and Stable Perovskite Solar Cells.

作者信息

Zhang Wanqi, Li Yan, Song Xiangfei, Yang He, Kang Zihu, Zheng Yue, Tao Xia

机构信息

State Key Laboratory of Organic-Inorganic Composites, Beijing University of Chemical Technology, Beijing 100029, China.

出版信息

ACS Appl Mater Interfaces. 2025 Mar 26;17(12):18441-18449. doi: 10.1021/acsami.5c00846. Epub 2025 Mar 14.

Abstract

Perovskite solar cells (PSCs) have made significant progress in efficiency, but their long-term operational stability remains an important yet challenging issue. Here, a dual-site passivation coupling internal encapsulation strategy is developed by introducing 3,5-bis(trifluoromethyl)-benzenethiol (35BBT) at the perovskite (PVK)/hole transport layer (HTL) interface. 35BBT provides dual active sites containing sulfur (S) atoms and fluorine (F) atoms, where the S atoms in the sulfhydryl group and the F atoms in the trifluoromethyl group coordinate with unpaired Pb to form coordinate bonds, meanwhile the F atoms in the trifluoromethyl group form hydrogen bonds with organic cations. This dual-site passivation mitigates deep and shallow defects at the PVK/HTL interface. Notably, 35BBT, with hydrophobic trifluoromethyl and benzene rings covering the perovskite layer, enables internal encapsulation to protect the perovskite films from water and oxygen invasion. Consequently, the Ag-based device with 35BBT treatment achieves an efficiency enhancement from 22.03% to 23.86%, retaining 89.1% of its initial efficiency even after 2000 h of air exposure. This fabricated device also exhibits long-term thermal stability at 60 °C. This study offers an avenue for simultaneously passivating deep and shallow defects at the PVK/HTL interface and inhibiting water/oxygen erosion, thereby enabling the fabrication of efficient and stable PSCs for future commercial applications.

摘要

钙钛矿太阳能电池(PSCs)在效率方面取得了显著进展,但其长期运行稳定性仍然是一个重要且具有挑战性的问题。在此,通过在钙钛矿(PVK)/空穴传输层(HTL)界面引入3,5-双(三氟甲基)苯硫醇(35BBT),开发了一种双位点钝化耦合内部封装策略。35BBT提供了包含硫(S)原子和氟(F)原子的双活性位点,其中巯基中的S原子和三氟甲基中的F原子与未成对的Pb配位形成配位键,同时三氟甲基中的F原子与有机阳离子形成氢键。这种双位点钝化减轻了PVK/HTL界面处的深浅缺陷。值得注意的是,具有疏水三氟甲基和苯环覆盖钙钛矿层的35BBT实现了内部封装,以保护钙钛矿薄膜免受水和氧气的侵入。因此,经过35BBT处理的银基器件效率从22.03%提高到23.86%,即使在空气暴露2000小时后仍保留其初始效率的89.1%。这种制造的器件在60°C下还表现出长期热稳定性。本研究为同时钝化PVK/HTL界面处的深浅缺陷和抑制水/氧侵蚀提供了一条途径,从而能够制造出用于未来商业应用的高效稳定的PSCs。

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