Liu Wenqiang, Qi Zitong, Liu Tuanning, Zhang Yang
School of Electronic and Electrical Engineering, Henan Key Laboratory of Optoelectronic Sensing Integrated Application, Henan Normal University, Xinxiang, Henan 453007, China.
School of Physics and Electronics, Henan University, Kaifeng, Henan 475004, China.
ACS Appl Mater Interfaces. 2025 Mar 19;17(11):17143-17152. doi: 10.1021/acsami.5c01999. Epub 2025 Mar 6.
Inorganic halide perovskite nanocrystals (NCs) are regarded as promising emitters for light-emitting diodes due to their bright and narrow emission. However, surface defects often result in trap states and ion migration, which remains a huge challenge for high-quality perovskite NCs. Herein, fluoride ions are introduced into CsPbBr perovskite NCs at room temperature through the chelation of ligands. Experimental results demonstrate that these fluoride ions from inorganic salts can improve the average lifetime and crystallinity of CsPbBr NCs. Meanwhile, the resulting photoluminescence quantum yield is optimized up to 99.02%, and it has high stability to water, heat, and ultraviolet light. Density functional theory calculations show that fluoride ions have a higher binding energy compared to other ligands, which not only removes the electron trapping center but also increases the halogen ion migration energy. By mixing green-emission CsPbBr NCs and red-emission KSiF:Mn phosphors on a blue chip, the fabricated white light emitting diode shows a high luminous efficiency of 147.8 lm/W, a wide color gamut (129% for NTSC), and CIE coordinates of (0.3160, 0.3051). Furthermore, the photoluminescence intensity decreased by only 2.9% after 48 h of continuous operation.
无机卤化物钙钛矿纳米晶体(NCs)因其明亮且窄的发射而被视为发光二极管中有前景的发光体。然而,表面缺陷常常导致陷阱态和离子迁移,这对高质量钙钛矿NCs来说仍然是一个巨大的挑战。在此,通过配体的螯合作用在室温下将氟离子引入CsPbBr钙钛矿NCs中。实验结果表明,这些来自无机盐的氟离子可以提高CsPbBr NCs的平均寿命和结晶度。同时,所得到的光致发光量子产率优化至99.02%,并且它对水、热和紫外光具有高稳定性。密度泛函理论计算表明,与其他配体相比,氟离子具有更高的结合能,这不仅消除了电子俘获中心,还增加了卤素离子迁移能。通过在蓝色芯片上混合绿色发射的CsPbBr NCs和红色发射的KSiF:Mn荧光粉,所制备的白光发光二极管显示出147.8 lm/W的高发光效率、宽色域(NTSC为129%)以及(0.3160, 0.3051)的CIE坐标。此外,连续运行48小时后,光致发光强度仅下降了2.9%。