Yang Peng, Li Ziwei, Yu Haidong, Gao Shan, Jia Xiaopeng, Ma Hongan, Jin Xilian
State Key Laboratory of High Pressure and Superhard Materials, College of Physics, Jilin University, Changchun 130012, China.
College of Physics and Electronic Information Engineering, Tongren University, Tongren 554300, China.
Nanomaterials (Basel). 2025 Mar 15;15(6):446. doi: 10.3390/nano15060446.
In this study, a combination of theoretical calculations and experiments were carried out to analyze boron phosphide materials. Amorphous boron powder and amorphous red phosphorus were used as raw materials to directly synthesize the target samples in one step under high-pressure and high-temperature (HPHT) conditions. Theoretical calculations were then carried out based on the XRD spectra of boron phosphide at 4 GPa and 1200 °C. The experimental results show that the target samples can be successfully prepared at HPHT. The electrical properties of the samples were characterized, and it was found that their conductivity increased with the increase in temperature, and they have a semiconducting nature, which is consistent with the theoretical calculations. Its Seebeck coefficient is positive at different temperatures, indicating that the synthesized boron phosphide is a P-type semiconductor. The combination of theoretical calculations and experiments shows that high pressure can reduce the lattice constant of boron phosphide, thus reducing its forbidden bandwidth, which improves its electrical properties. EDS shows a homogeneous distribution of the elements in the samples. Successful synthesis of BP crystals will probably stimulate more research into its semiconductor properties. It may also provide some assistance in the application of BP in aero-engine high-temperature monitoring systems as well as thermally controlled coatings for deep-space probes.
在本研究中，开展了理论计算与实验相结合的方法来分析磷化硼材料。以非晶态硼粉和非晶态红磷为原料，在高温高压（HPHT）条件下一步直接合成目标样品。然后基于4 GPa和1200 °C下磷化硼的XRD光谱进行理论计算。实验结果表明，在高温高压条件下可以成功制备目标样品。对样品的电学性质进行了表征，发现其电导率随温度升高而增加，并且具有半导体性质，这与理论计算结果一致。其塞贝克系数在不同温度下均为正值，表明合成的磷化硼是一种P型半导体。理论计算与实验相结合表明，高压可以减小磷化硼的晶格常数，从而减小其禁带宽度，进而改善其电学性质。EDS显示样品中元素分布均匀。成功合成BP晶体可能会激发更多关于其半导体性质的研究。它还可能为BP在航空发动机高温监测系统以及深空探测器热控涂层中的应用提供一些帮助。
