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用于光子量子比特的毫秒级集成量子存储器。

A millisecond integrated quantum memory for photonic qubits.

作者信息

Liu Yu-Ping, Ou Zhong-Wen, Zhu Tian-Xiang, Su Ming-Xu, Liu Chao, Han Yong-Jian, Zhou Zong-Quan, Li Chuan-Feng, Guo Guang-Can

机构信息

CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.

Anhui Province Key Laboratory of Quantum Network, University of Science and Technology of China, Hefei 230026, China.

出版信息

Sci Adv. 2025 Mar 28;11(13):eadu5264. doi: 10.1126/sciadv.adu5264. Epub 2025 Mar 26.

Abstract

Quantum memories for light are essential building blocks for quantum repeaters and quantum networks. Integrated operations of quantum memories could enable scalable application with low-power consumption. However, the photonic quantum storage lifetime in integrated devices has so far been limited to tens of microseconds, falling short of the requirements for practical applications. Here, we demonstrate quantum storage of photonic qubits for 1.021 milliseconds based on a laser-written optical waveguide fabricated in a Eu:YSiO crystal. Spin dephasing of Eu is mitigated through dynamical decoupling applied via on-chip electric waveguides, and we obtain a storage efficiency of 12.0 ± 0.5% at 1.021 milliseconds, which is a demonstration of integrated quantum memories that outperforms the efficiency of a simple fiber delay line. Such long-lived waveguide-based quantum memory could support applications in quantum repeaters, and further combination with critical magnetic fields could enable potential application as transportable quantum memories.

摘要

光量子存储器是量子中继器和量子网络的基本组成部分。量子存储器的集成操作能够实现低功耗的可扩展应用。然而,到目前为止,集成器件中的光子量子存储寿命仅限于几十微秒,无法满足实际应用的需求。在此,我们基于在铕掺杂硅酸钇(Eu:YSiO)晶体中制造的激光写入光波导,展示了1.021毫秒的光子量子比特的量子存储。通过片上电介质波导施加的动态解耦减轻了铕的自旋退相,并且我们在1.021毫秒时获得了12.0±0.5%的存储效率,这证明了集成量子存储器的性能优于简单光纤延迟线的效率。这种基于光波导的长寿命量子存储器可支持量子中继器中的应用,并且与临界磁场的进一步结合可实现作为可移动量子存储器的潜在应用。

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