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推进非水蚀刻策略以实现二维碳化钼(MXenes)的快速高产合成。

Advancing Non-Aqueous Etching Strategy for Swift and High-Yield Synthesis of 2D Molybdenum Carbides (MXenes).

作者信息

Yoon Jaeeun, Park Ki Hong, Lee Seungjun, Kim Taehee, Choi Gwan Hyun, Lee Albert S, Kim Seon Joon, Koo Chong Min, Oh Taegon

机构信息

Extreme Materials Research Center, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea.

Convergence Research Center for Solutions to Electromagnetic Interference in Future-Mobility, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea.

出版信息

Small. 2025 May;21(21):e2411319. doi: 10.1002/smll.202411319. Epub 2025 Apr 3.

Abstract

Aqueous hydrofluoric acid (HF)-based solutions are widely used for etching MAX phases to synthesize high-purity 2D molybdenum carbides (MXenes). However, their applicability is limited to selected MAX phases, and the production of certain MXenes, such as Mo-based MXenes, remains challenging owing to low quality, low yield, and the time-intensive process, often requiring several days to weeks. In this study, a non-aqueous etchant for faster and more efficient synthesis of high-purity Mo-based MXenes is introduced. This etchant, containing Cl and F ions, is adequately effective to etch the MAX phase using the F ions of moderate concentration regenerated from GaF byproducts but only mildly caustic to prevent damage to the resulting MXene. Using this approach, the rapid production of MoCT is demonstrated within 24 h at 100 °C, achieving up to 90% multilayer and 45% monolayer yields. Furthermore, the resulting monolayer MoCT flake exhibits larger sizes and fewer defects, with an electrical conductivity of 5.9 S cm, 6.5 times higher than that (0.9 S cm) of aqueous HF-MoCT. This enhancement results in improved electrocatalytic activity of high-purity MoCT for hydrogen evolution reactions. These findings highlight the potential of non-aqueous etching solutions to address the limitations of HF-based MXene synthesis.

摘要

基于氢氟酸(HF)的水溶液被广泛用于蚀刻MAX相以合成高纯度二维碳化钼(MXenes)。然而,它们的适用性仅限于特定的MAX相,并且某些MXenes(如钼基MXenes)的生产由于质量低、产率低和耗时的过程(通常需要几天到几周)而仍然具有挑战性。在本研究中,引入了一种用于更快、更高效地合成高纯度钼基MXenes的非水蚀刻剂。这种蚀刻剂含有Cl和F离子,使用从GaF副产品再生的中等浓度的F离子蚀刻MAX相具有足够的效果,但腐蚀性较弱,以防止对所得MXene造成损害。使用这种方法,在100°C下24小时内证明了MoCT的快速生产,多层产率高达90%,单层产率达45%。此外,所得的单层MoCT薄片尺寸更大、缺陷更少,电导率为5.9 S cm,比水性HF-MoCT的电导率(0.9 S cm)高6.5倍。这种增强导致高纯度MoCT对析氢反应的电催化活性提高。这些发现突出了非水蚀刻溶液解决基于HF的MXene合成局限性的潜力。

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