Guo Jianing, Wang Fengchao, Li Lan, Zhang Canyun, Kong Jinfang, Chen Jin, Guo Xin
College of Sciences, Shanghai Institute of Technology, 100 Haiquan Road, Shanghai, 201418, People's Republic of China.
Department of Mathematics and Physics, Naval Medical University, 800 Xiangyin Road, Shanghai, 200433, People's Republic of China.
Sci Rep. 2025 Apr 3;15(1):11496. doi: 10.1038/s41598-025-95934-7.
Lead-free double perovskite CsAgBiX (X = Cl or Br), as an environmentally friendly alternative to lead-based perovskite, has recently received much attention due to its excellent optoelectronic properties and potential applications. In this study, Li doped CsAgBiCl crystals are synthesized by heat-assisted solution evaporation. The crystal structure characteristics, component analysis and optical performances are investigated experimentally. Theoretically, the influence of Li doping on band structure and density of state is explored further by using density functional theory (DFT). It is found that obtained CsLiAgBiCl crystals exhibit typical double perovskite structure, and Li doping induces slight lattice contraction accompanied with the partial substitution of Ag, and improves the photoluminescence (PL) emission. Additionally, the theoretical calculation indicates that Li doping can make the band gap increase, introduce deep energy levels into valence band (VB) and conduction band (CB), and meanwhile probably change the transition route to the allowed radiative recombination. These doped lead-free double perovskite materials have potential applications in optoelectronic devices due to their improved optical properties.
无铅双钙钛矿CsAgBiX(X = Cl或Br)作为铅基钙钛矿的环保替代品,因其优异的光电性能和潜在应用,近年来备受关注。在本研究中,通过热辅助溶液蒸发法合成了锂掺杂的CsAgBiCl晶体。对其晶体结构特征、成分分析和光学性能进行了实验研究。从理论上,利用密度泛函理论(DFT)进一步探究了锂掺杂对能带结构和态密度的影响。研究发现,所制备的CsLiAgBiCl晶体呈现典型的双钙钛矿结构,锂掺杂导致轻微的晶格收缩并伴有银的部分取代,同时提高了光致发光(PL)发射。此外,理论计算表明,锂掺杂可使带隙增大,在价带(VB)和导带(CB)中引入深能级,同时可能改变跃迁路径至允许的辐射复合。这些掺杂的无铅双钙钛矿材料因其改善的光学性能在光电器件中具有潜在应用。