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分子铁电体[(NMe)PCHCl]PbI展现出两步开关二阶非线性光学性质。

Molecular Ferroelectric [(NMe)PCHCl]PbI Showing Two-Step Switching Second-Order Nonlinear Optics.

作者信息

Wang Qing, Liu Qing, Xie Yongfa, Wei Zhenhong, Cai Hu

机构信息

College of Chemistry and Chemical Engineering, Nanchang University, Nanchang, 330031, P. R. China.

出版信息

Inorg Chem. 2025 Apr 21;64(15):7630-7638. doi: 10.1021/acs.inorgchem.5c00640. Epub 2025 Apr 9.

DOI:10.1021/acs.inorgchem.5c00640
PMID:40203221
Abstract

Molecular ferroelectrics have garnered significant attention owing to their environmental compatibility, facile synthesis, lightweight nature, and structural versatility. In this study, we present a novel one-dimensional (1D) organic-inorganic hybrid perovskite molecular ferroelectric, [(NMe)PCHCl]PbI (), which undergoes two successive reversible phase transitions. This compound demonstrates distinct spontaneous polarization in ferroelectric domains, along with two-step switching in second-harmonic generation (SHG) and dielectric responses. Variable-temperature single-crystal X-ray diffraction reveals a symmetry-breaking transition in , shifting from the centrosymmetric 6/ space group to the polar noncentrosymmetric 6 ferroelectric phase. This transition is primarily driven by an order-disorder transformation of the [(NMe)PCHCl] cation. Furthermore, compound exhibits promising semiconductor characteristic with a bandgap of 2.70 eV. This material's unique high-low-off SHG-switching behavior and robust polarization switching ( = 0.3 μC·cm) position it as a multifunctional platform for next-generation applications in multistate memory devices, programmable optical modulators, and temperature-responsive sensors, addressing critical limitations of conventional molecular ferroelectrics in stability and functional diversity.

摘要

分子铁电体因其环境兼容性、易于合成、重量轻和结构多样性而备受关注。在本研究中,我们展示了一种新型的一维(1D)有机-无机杂化钙钛矿分子铁电体,[(NMe)PCHCl]PbI(),它经历了两个连续的可逆相变。该化合物在铁电畴中表现出明显的自发极化,以及二次谐波产生(SHG)和介电响应的两步切换。变温单晶X射线衍射揭示了中的对称破缺转变,从中心对称的6/空间群转变为极性非中心对称的6铁电相。这种转变主要由[(NMe)PCHCl]阳离子的有序-无序转变驱动。此外,化合物表现出有前景的半导体特性,带隙为2.70 eV。这种材料独特的高-低-关断SHG切换行为和强大的极化切换(= 0.3 μC·cm)使其成为多态存储器件、可编程光调制器和温度响应传感器等下一代应用的多功能平台,解决了传统分子铁电体在稳定性和功能多样性方面的关键限制。

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