Chen Zilin, Huang Wayne Cheng-Wei, Batelaan Herman
Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208, United States.
Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States.
ACS Photonics. 2025 Jan 27;12(4):1734-1738. doi: 10.1021/acsphotonics.4c01997. eCollection 2025 Apr 16.
The motion of free electrons moving parallel and above a semiconductor surface can be influenced by shining a laser light onto the surface. Here we report strong deflection of aloof electrons by an undoped GaAs surface illuminated with a 633 nm laser. The deflecting electric field from the surface photovoltaic charges extends 100 μm into the vacuum. As surface photovoltage (SPV) is sensitive to the electronic states of the GaAs surface, the aloof electron beam serves as a probe for SPV charge dynamics on the mesoscopic length scale. The observed in-plane SPV charge distribution persists beyond 1 second after the laser beam is blocked. Our work suggests the possibility of writing designed 2D charge patterns on semiconductor surfaces with a scanning laser beam, providing unusual flexibility for electron beam manipulation.
通过向半导体表面照射激光，可以影响在该表面上方平行移动的自由电子的运动。在此，我们报告了用633 nm激光照射未掺杂的砷化镓表面时，远离电子的强烈偏转。来自表面光伏电荷的偏转电场延伸到真空中100μm处。由于表面光电压（SPV）对砷化镓表面的电子态敏感，远离电子束可作为介观长度尺度上SPV电荷动力学的探针。在激光束被阻挡后，观察到的面内SPV电荷分布持续超过1秒。我们的工作表明，有可能用扫描激光束在半导体表面写入设计好的二维电荷图案，为电子束操纵提供了不同寻常的灵活性。
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