Gao Xinyu, Gao Zihao, Sun Zhen, Song Ping, Feng Xiyuan, Jin Zhixin
School of Science, Yanshan University, Qinhuangdao 066004, China.
School of Microelectronics, Northwestern Polytechnical University, Xi'an 710129, China.
Micromachines (Basel). 2025 Mar 27;16(4):379. doi: 10.3390/mi16040379.
Lead halide perovskite solar cells (PSCs) have shown tremendous progress in the last few years. However, highly toxic Pb and its instability have restricted their further development. On the other hand, antimony-based perovskites such as cesium antimony iodide (CsSbI) have shown high stability but low power conversion efficiency (PCE) due to the limited transfer of photocarriers and the poor quality of films. Here, we present a novel method to improve the performance of CsSbI PSCs through a FACl-modified buried interface. FACl acts as a bi-functional additive, and FA incorporation enhances the crystallinity and light absorption of films. Furthermore, treatment with FACl optimizes the level position of CsSbI. In addition, transient photovoltage and transient photocurrent were employed to confirm the reduction of charge recombination and superior carrier transportation. By using a planar device structure, we found the PCE of a FACl-CsSbI-based device to be 1.66%. The device, stored for 2 months under N conditions, showed a negligible loss in PCE. Overall, this study provides a new strategy to further enhance the performance of Sb-based PSCs.
卤化铅钙钛矿太阳能电池（PSCs）在过去几年中取得了巨大进展。然而，剧毒的铅及其不稳定性限制了它们的进一步发展。另一方面，基于锑的钙钛矿，如碘化铯锑（CsSbI），由于光载流子转移受限和薄膜质量差，表现出高稳定性但低功率转换效率（PCE）。在此，我们提出了一种通过FACl修饰的掩埋界面来提高CsSbI PSCs性能的新方法。FACl作为一种双功能添加剂，掺入FA可提高薄膜的结晶度和光吸收。此外，用FACl处理可优化CsSbI的能级位置。此外，采用瞬态光电压和瞬态光电流来证实电荷复合的减少和优异的载流子传输。通过使用平面器件结构，我们发现基于FACl-CsSbI的器件的PCE为1.66%。该器件在N条件下储存2个月后，PCE损失可忽略不计。总体而言，本研究为进一步提高基于锑的PSCs的性能提供了一种新策略。
