Investigation of a Magnetic Sensor Based on the Magnetic Hysteresis Loop and Anisotropic Magnetoresistance of CoFe Thin Films Epitaxial Grown on Flexible Mica and Rigid MgO Substrates with Strain Effect.

The anisotropic magnetoresistance (AMR) effect is widely used in microscale and nanoscale magnetic sensors. In this study, we investigate the correlation between AMR and the crystal structure, epitaxial relationship, and magnetic properties of CoFe thin films deposited on rigid MgO and flexible mica substrates. The AMR ratio is approximately 1.6% for CoFe films on mica, lower than the 2.5% observed in epitaxially grown films on MgO substrates. The difference is likely due to the well-defined easy axis in the single domain epitaxial thin films on MgO, which enhances the AMR ratio. Microscopic strain induced by lattice mismatch and bending on flexible substrates were determined using grazing incidence X-ray diffraction and extended X-ray absorption fine structure techniques. These results showed that neither microscopic nor macroscopic strain (below 0.5%) affects the AMR ratio on mica, suggesting its suitability for magnetic sensors in flexible and wearable devices. Additionally, investigating M-H loops under various growth temperatures, lattice mismatch conditions, and bending strains could further benefit the fabrication and integration of the micro-scale magnetic sensors in the microelectronic industry.