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基于在具有应变效应的柔性云母和刚性氧化镁衬底上外延生长的CoFe薄膜的磁滞回线和各向异性磁阻的磁传感器研究。

Investigation of a Magnetic Sensor Based on the Magnetic Hysteresis Loop and Anisotropic Magnetoresistance of CoFe Thin Films Epitaxial Grown on Flexible Mica and Rigid MgO Substrates with Strain Effect.

作者信息

Cheng Jen-Chieh, You Min-Chang, Anbalagan Aswin Kumar, Su Guang-Yang, Chuang Kai-Wei, Yang Chao-Yao, Lee Chih-Hao

机构信息

Institute of Nuclear Engineering and Science, National Tsing Hua University, Hsinchu 30013, Taiwan.

Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan.

出版信息

Micromachines (Basel). 2025 Mar 30;16(4):412. doi: 10.3390/mi16040412.

DOI:10.3390/mi16040412
PMID:40283288
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC12029272/
Abstract

The anisotropic magnetoresistance (AMR) effect is widely used in microscale and nanoscale magnetic sensors. In this study, we investigate the correlation between AMR and the crystal structure, epitaxial relationship, and magnetic properties of CoFe thin films deposited on rigid MgO and flexible mica substrates. The AMR ratio is approximately 1.6% for CoFe films on mica, lower than the 2.5% observed in epitaxially grown films on MgO substrates. The difference is likely due to the well-defined easy axis in the single domain epitaxial thin films on MgO, which enhances the AMR ratio. Microscopic strain induced by lattice mismatch and bending on flexible substrates were determined using grazing incidence X-ray diffraction and extended X-ray absorption fine structure techniques. These results showed that neither microscopic nor macroscopic strain (below 0.5%) affects the AMR ratio on mica, suggesting its suitability for magnetic sensors in flexible and wearable devices. Additionally, investigating M-H loops under various growth temperatures, lattice mismatch conditions, and bending strains could further benefit the fabrication and integration of the micro-scale magnetic sensors in the microelectronic industry.

摘要

各向异性磁阻(AMR)效应在微纳尺度磁传感器中有着广泛应用。在本研究中,我们探究了沉积在刚性MgO和柔性云母衬底上的CoFe薄膜的AMR与晶体结构、外延关系及磁性能之间的相关性。云母上CoFe薄膜的AMR比率约为1.6%,低于在MgO衬底上外延生长薄膜中观察到的2.5%。这种差异可能是由于MgO上单畴外延薄膜中明确的易轴,它提高了AMR比率。利用掠入射X射线衍射和扩展X射线吸收精细结构技术确定了柔性衬底上晶格失配和弯曲引起的微观应变。这些结果表明,微观和宏观应变(低于0.5%)均不会影响云母上的AMR比率,这表明其适用于柔性和可穿戴设备中的磁传感器。此外,研究不同生长温度、晶格失配条件和弯曲应变下的M-H回线,可能会进一步有利于微电子行业中微尺度磁传感器的制造和集成。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a7d/12029272/24cdb28484a3/micromachines-16-00412-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a7d/12029272/151a7b5e5938/micromachines-16-00412-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a7d/12029272/468f35017548/micromachines-16-00412-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a7d/12029272/9969430e9240/micromachines-16-00412-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a7d/12029272/8d0b9bc9c42e/micromachines-16-00412-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a7d/12029272/d9b972d2dd3f/micromachines-16-00412-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a7d/12029272/00bca9e30769/micromachines-16-00412-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a7d/12029272/f1cd8f85daf1/micromachines-16-00412-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a7d/12029272/eca6cea445af/micromachines-16-00412-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a7d/12029272/69718377a1f7/micromachines-16-00412-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a7d/12029272/24cdb28484a3/micromachines-16-00412-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a7d/12029272/151a7b5e5938/micromachines-16-00412-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a7d/12029272/468f35017548/micromachines-16-00412-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a7d/12029272/9969430e9240/micromachines-16-00412-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a7d/12029272/8d0b9bc9c42e/micromachines-16-00412-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a7d/12029272/d9b972d2dd3f/micromachines-16-00412-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a7d/12029272/00bca9e30769/micromachines-16-00412-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a7d/12029272/f1cd8f85daf1/micromachines-16-00412-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a7d/12029272/eca6cea445af/micromachines-16-00412-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a7d/12029272/69718377a1f7/micromachines-16-00412-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a7d/12029272/24cdb28484a3/micromachines-16-00412-g010.jpg

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