Liu Longfei, Li Hui, Xie Juxuan, Yang Zhiyuan, Bai Yuanqing, Li Mingke, Huang Zixin, Zhang Kai, Huang Fei
Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510640, P. R. China.
Guangdong Basic Research Center of Excellence for Energy and Information Polymer Materials, Guangzhou, 510640, P. R. China.
Adv Mater. 2025 Jul;37(28):e2500352. doi: 10.1002/adma.202500352. Epub 2025 Apr 26.
Recently, benzene-based solid additives (BSAs) have emerged as pivotal components in modulating the morphology of the blend film in organic solar cells (OSCs). However, since almost all substituents on BSAs are weak electron-withdrawing groups and contain halogen atoms, the study of BSAs with non-halogenated strong electron-withdrawing groups has received little attention. Herein, an additive strategy is proposed, involving the incorporation of non-halogenated strong electron-withdrawing groups on the benzene ring. An effective BSA, 4-nitro-benzonitrile (NBN), is selected to boost the efficiency of devices. The results demonstrate that the NBN-treated device exhibits enhanced light absorption, superior charge transport performance, mitigated charge recombination, and more optimal morphology compared to the additive-free OSC. Consequently, the D18:BTP-eC9+NBN-based binary device and D18:L8-BO:BTP-eC9+NBN-based ternary OSC processed by non-halogenated solvent achieved outstanding efficiencies of 20.22% and 20.49%, respectively. Furthermore, the universality of NBN is also confirmed in different active layer systems. In conclusion, this work demonstrates that the introduction of non-halogenated strong electron-absorbing moieties on the benzene ring is a promising approach to design BSAs, which can tune the film morphology and achieve highly efficient devices, and has certain guiding significance for the development of BSAs.
最近,基于苯的固体添加剂(BSAs)已成为调节有机太阳能电池(OSCs)中混合膜形态的关键组分。然而,由于BSAs上几乎所有取代基都是弱吸电子基团且含有卤素原子,对具有非卤代强吸电子基团的BSAs的研究很少受到关注。在此,提出了一种添加剂策略,即在苯环上引入非卤代强吸电子基团。选择一种有效的BSA,4-硝基苯甲腈(NBN)来提高器件效率。结果表明,与无添加剂的OSC相比,经NBN处理的器件表现出增强的光吸收、优异的电荷传输性能、减轻的电荷复合以及更优化的形态。因此,由非卤代溶剂加工的基于D18:BTP-eC9+NBN的二元器件和基于D18:L8-BO:BTP-eC9+NBN的三元OSC分别实现了20.22%和20.49%的优异效率。此外,NBN在不同活性层体系中的通用性也得到了证实。总之,这项工作表明在苯环上引入非卤代强吸电子部分是设计BSAs的一种有前途的方法,它可以调节膜形态并实现高效器件,对BSAs的发展具有一定的指导意义。