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一种新的铟基杂化材料[(CHN)(InCl)·2(HO)]的合成、晶体结构、振动研究、光学表征、 Hirshfeld表面分析和介电研究

Synthesis, crystal structure, vibrational study, optical characterization, Hirshfeld surface analysis and dielectric studies of a new indium-based hybrid material formulated as [(CHN)(InCl)·2(HO)].

作者信息

Khachroum Hajer, Ben Rhaiem Abdallah, Abdelbaky Mohammed S M, Dammak Mohamed, García-Granda Santiago

机构信息

Laboratory Inorganic Chemistry, Faculty of Sciences of Sfax, University of Sfax Sfax 3000 Tunisia

Departamento de Química Física y Analítica, Universidad de Oviedo-CINN Oviedo 33006 Spain.

出版信息

RSC Adv. 2025 Apr 28;15(17):13628-13642. doi: 10.1039/d5ra01127b. eCollection 2025 Apr 22.

Abstract

A newly developed indium-based hybrid compound, [(CHN)(InCl)·2(HO)], was successfully synthesized using a slow evaporation method at room temperature. Scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDX) were employed to observe the morphology and chemical composition of the particles. Structural analysis was performed through crystal X-ray diffraction (SXRD) and powder X-ray diffraction (PXRD) and revealed that the studied material crystallized in the triclinic 1 space group. The atom packing in this structure was characterized by the presence of alternating organic and inorganic layers along the -axis. These arrangements were stabilized through multiple hydrogen bonds and centroid-centroid stacking interactions occurring between nearly parallel organic cations. Vibrational and optical properties were also explored using FT-IR and UV-Vis methods, respectively. Additionally, thermal analysis was performed TGA/DTA and DSC measurements to assess the thermal stability and phase transformation of the title compound. Analysis of the Hirshfeld surface was carried out to examine the interactions between molecules. This allowed a quantitative assessment of the relative contribution of these interactions in the crystal structure. AC conductivity measurements (10 Ω cm) confirmed the semiconductor character of the compound. The conductivity mechanism was attributed to the correlated barrier hopping (CBH) mechanism. Furthermore, electrical modulus measurements demonstrated the presence of grain effects.

摘要

一种新开发的基于铟的混合化合物[(CHN)(InCl)·2(HO)],在室温下通过缓慢蒸发法成功合成。采用扫描电子显微镜(SEM)和能量色散X射线光谱(EDX)观察颗粒的形态和化学成分。通过晶体X射线衍射(SXRD)和粉末X射线衍射(PXRD)进行结构分析,结果表明所研究的材料结晶于三斜1空间群。该结构中的原子堆积特征是沿轴存在交替的有机和无机层。这些排列通过几乎平行的有机阳离子之间发生的多个氢键和质心-质心堆积相互作用得以稳定。还分别使用傅里叶变换红外光谱(FT-IR)和紫外-可见光谱(UV-Vis)方法探索了振动和光学性质。此外,通过热重分析(TGA)/差示热分析(DTA)和差示扫描量热法(DSC)测量进行热分析,以评估标题化合物的热稳定性和相变。进行了Hirshfeld表面分析以研究分子间的相互作用。这使得能够对这些相互作用在晶体结构中的相对贡献进行定量评估。交流电导率测量(10 Ω cm)证实了该化合物的半导体特性。导电机制归因于相关势垒跳跃(CBH)机制。此外,电模量测量表明存在晶粒效应。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/74eb/12035700/8725f92b0ff0/d5ra01127b-f1.jpg

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