- 掺杂和 - 掺杂对（In，Al）As/AlAs和Al（Sb，As）/AlAs异质结构阳离子和阴离子亚晶格中空位形成的影响。
Effect of - and -Doping on Vacancy Formation in Cationic and Anionic Sublattices of (In,Al)As/AlAs and Al(Sb,As)/AlAs Heterostructures.
作者信息
Shamirzaev Timur S, Atuchin Victor V
机构信息
Laboratory of Physics and Technology of Heterostructures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia.
Department of Physics, Novosibirsk State University, Novosibirsk 630090, Russia.
出版信息
Nanomaterials (Basel). 2023 Jul 23;13(14):2136. doi: 10.3390/nano13142136.
The vacancy generation dynamics in doped semiconductor heterostructures with quantum dots (QD) formed in the cationic and anionic sublattices of AlAs is studied. We demonstrate experimentally that the vacancy-mediated high temperature diffusion is enhanced (suppressed) in n- and p-doped heterostructures with QDs formed in the cationic sublattice, while the opposite behavior occurs in the heterostructures with QDs formed in the anionic sublattice. A model describing the doping effect on the vacancy generation dynamics is developed. The effect of nonuniform charge carrier spatial distribution arisen in heterostructures at high temperatures on the vacancy generation and diffusion is revealed.
研究了在AlAs的阳离子和阴离子亚晶格中形成量子点（QD）的掺杂半导体异质结构中的空位产生动力学。我们通过实验证明，在阳离子亚晶格中形成量子点的n型和p型掺杂异质结构中，空位介导的高温扩散增强（抑制），而在阴离子亚晶格中形成量子点的异质结构中则出现相反的行为。建立了一个描述掺杂对空位产生动力学影响的模型。揭示了高温下异质结构中出现的非均匀电荷载流子空间分布对空位产生和扩散的影响。
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