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界面反应对钙钛矿光电器件的影响。

Influence of Interfacial Reactions on Perovskite Optoelectronic Devices.

作者信息

Yuan Zhongcheng, Bai Sai, Gao Feng, Snaith Henry J

机构信息

Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, OX1 3PU, UK.

Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 611731, China.

出版信息

Small Methods. 2025 May 3:e2500438. doi: 10.1002/smtd.202500438.

DOI:10.1002/smtd.202500438
PMID:40317672
Abstract

Interfacial materials tend to alter the crystallization, films growth and defect formation process of the as-deposited perovskites, which has been a critical and fundamental factor in determining the efficiency and operational stability of perovskite-based optoelectronic devices. This review explores the underlying mechanism of interfacial reactions, which can either result in degradations or be beneficial. The influence of interfacial reactions, mainly interface-induced deprotonation of organic cations and amidation processes, are discussed in relation to their impact on perovskite film growth and ensuing optoelectronic device performance. It is further proposed strategies to regulate these reactions and mitigate their negative effects to achieve high performance optoelectronic devices.

摘要

界面材料往往会改变沉积态钙钛矿的结晶、薄膜生长和缺陷形成过程,这是决定钙钛矿基光电器件效率和运行稳定性的关键和基本因素。本综述探讨了界面反应的潜在机制,这些反应可能导致降解,也可能是有益的。讨论了界面反应的影响,主要是界面诱导的有机阳离子去质子化和酰胺化过程,以及它们对钙钛矿薄膜生长和随之而来的光电器件性能的影响。还进一步提出了调节这些反应并减轻其负面影响以实现高性能光电器件的策略。

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