Xu Haoxuan, Deng Bo, Zhang Xinan
Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, China.
Materials (Basel). 2025 Apr 27;18(9):1980. doi: 10.3390/ma18091980.
Solution-processed metal oxide dielectrics often result in unstable thin-film transistor (TFT) performance, hindering the development of next-generation metal oxide electronics. In this study, we prepared fluorine (F)-doped zirconium oxide (ZrO) dielectric layers using a chemical solution method to construct TFTs. The characterization by X-ray photoelectron spectroscopy (XPS) revealed that appropriate fluoride doping significantly reduces oxygen vacancies and the concentration of hydroxyl groups, thereby suppressing polarization processes. Subsequently, the electrical properties of Al/F:ZrO/nSi capacitors were evaluated, demonstrating that the optimized 10% F:ZrO dielectric exhibits a low leakage current density and stable capacitance across a wide frequency range. Indium zinc oxide (IZO) TFTs incorporating 10% F:ZrO dielectric layers were then fabricated. These devices displayed reliable electrical characteristics, including high mobility over a broad frequency range, reduced dual-sweep hysteresis, and excellent stability under positive-bias stress (PBS) after three months of aging. These findings indicate that the use of the fluorine-doped ZrO dielectric is a versatile strategy for achieving high-performance metal oxide thin-film electronics.
溶液处理的金属氧化物电介质常常导致薄膜晶体管（TFT）性能不稳定，阻碍了下一代金属氧化物电子产品的发展。在本研究中，我们采用化学溶液法制备了氟（F）掺杂的氧化锆（ZrO）介电层以构建TFT。通过X射线光电子能谱（XPS）表征发现，适当的氟化物掺杂显著减少了氧空位和羟基浓度，从而抑制了极化过程。随后，对Al/F:ZrO/nSi电容器的电学性能进行了评估，结果表明，优化后的10% F:ZrO电介质在很宽的频率范围内表现出低漏电流密度和稳定的电容。然后制备了包含10% F:ZrO介电层的铟锌氧化物（IZO）TFT。这些器件显示出可靠的电学特性，包括在很宽的频率范围内具有高迁移率、降低的双扫描滞后以及在老化三个月后在正偏压应力（PBS）下具有出色的稳定性。这些发现表明，使用氟掺杂的ZrO电介质是实现高性能金属氧化物薄膜电子产品的一种通用策略。
