Li Yunxin, He Sixian, Yin Chengdong, Du Yu-An, Zhao Liancheng, Gao Liming
State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China.
ACS Appl Mater Interfaces. 2025 May 28;17(21):31096-31106. doi: 10.1021/acsami.5c03415. Epub 2025 May 15.
2D materials offer an effective strategy for constructing self-powered Schottky junction devices with rapid response and high sensitivity. However, a single type of energy band coupling at the interface hinders the widespread applications of the photodetectors, while the changes of coupling types also face great challenges. Modulating the Fermi level and energy bands by gate voltage has emerged as a promising approach. In this study, a gate-modulated self-powered photodetector is fabricated based on a 2D van der Waals (vdWs) heterojunction composed of metallic NbSe and semiconducting MoS. Due to its NbSe/MoS vdWs heterostructure, the device exhibits a maximum responsivity of 455.3 mA/W, an excellent detectivity of 1.9 × 10 Jones, an ultrafast rise/decay time of 17/18 μs, and a broad spectral sensitivity under the irradiation ranging from 405 to 980 nm at zero bias. Furthermore, the corresponding responsivity and detectivity at a gate voltage of 40 V are around 7 times greater than those at -40 V. This work demonstrates the significant potential of 2D metallic NbSe integrated into vdWs heterostructure to design a high-performance broadband photodetector for near-infrared communication.
二维材料为构建具有快速响应和高灵敏度的自供电肖特基结器件提供了一种有效策略。然而，界面处单一类型的能带耦合阻碍了光电探测器的广泛应用，同时耦合类型的改变也面临巨大挑战。通过栅极电压调制费米能级和能带已成为一种有前景的方法。在本研究中，基于由金属NbSe和半导体MoS组成的二维范德华（vdWs）异质结制备了一种栅极调制自供电光电探测器。由于其NbSe/MoS vdWs异质结构，该器件在零偏压下，在405至980nm的光照范围内，表现出455.3 mA/W的最大响应度、1.9×10琼斯的优异探测率、17/18 μs的超快上升/下降时间以及宽光谱灵敏度。此外，在40V栅极电压下的相应响应度和探测率比在-40V时大7倍左右。这项工作展示了二维金属NbSe集成到vdWs异质结构中用于设计高性能近红外通信宽带光电探测器的巨大潜力。
