Ma Mingxiao, Yao Xiangyu, Wang Jianglong, Shi Xingqiang, Wang Ruining, Lian Ruqian, Kan Dongxiao, Jing Chenyang
Key Laboratory of Optic-Electronic Information and Materials of Hebei Province, Hebei Research Center of the Basic Discipline for Computational Physics, College of Physics Science and Technology, Hebei University Baoding 071002 China
Northwest Institute for Non-ferrous Metal Research Xi'an 710016 P. R. China
RSC Adv. 2025 May 15;15(20):16219-16227. doi: 10.1039/d5ra01985k. eCollection 2025 May 12.
The unique layered structure and tunable surface terminations of MXenes play a critical role in Mg storage and diffusion dynamics. This study systematically investigates the behavior of Mg in TiCO and its nitrogen-doped derivatives through theoretical calculations. In TiCO monolayers, Mg exhibits a high diffusion barrier of 0.81 eV due to strong electrostatic interactions. However, AA-stacking reduces this barrier to 0.32 eV by introducing staggered active sites. The instability caused by interlayer O-O repulsion is mitigated by modulating the N/O ratio (TiCON), resulting in a diffusion barrier of 0.27 eV. Transition metal substitution further optimizes performance, as exemplified by NbCN, which achieves an ultralow barrier of 0.23 eV through weakened N-N covalency and enhanced metal-N interactions. Voltage analysis reveals that NbCN possesses dual functionality as both cathode (4.00 V) and anode (0.64 V), contrasting with the anode-specific behavior observed in Ti-based MXenes.
MXenes独特的层状结构和可调节的表面终端在镁存储和扩散动力学中起着关键作用。本研究通过理论计算系统地研究了镁在TiCO及其氮掺杂衍生物中的行为。在TiCO单层中,由于强烈的静电相互作用,镁表现出0.81 eV的高扩散势垒。然而,AA堆积通过引入交错的活性位点将该势垒降低到0.32 eV。通过调节N/O比(TiCON)减轻了层间O-O排斥引起的不稳定性,从而产生了0.27 eV的扩散势垒。过渡金属取代进一步优化了性能,以NbCN为例,它通过减弱N-N共价性和增强金属-N相互作用实现了0.23 eV的超低势垒。电压分析表明,NbCN具有作为阴极(4.00 V)和阳极(0.64 V)的双重功能,这与在基于钛的MXenes中观察到的仅作为阳极的行为形成对比。