Chen Zhiyun, Zheng Shaohui
School of Materials and Energy, Southwest University, Second Tiansheng Road, Beibei District, Chongqing 400715, China.
J Phys Chem A. 2025 May 29;129(21):4690-4701. doi: 10.1021/acs.jpca.5c02299. Epub 2025 May 16.
The strategy of modification of central units of Y6-type nonfullerene acceptors (NFAs) with halogenation has become popular for designing new photovoltaic materials and has shown dramatic effects in improving photovoltaic properties. However, the underlying mechanism of how halogenation of central units of these NFAs influences photoelectric properties remains rather elusive. In this paper, focusing on two reported promising NFAs and with varying degrees of ring fusion at central units, we designed 4 new NFAs and modeled 10 NFAs systematically through fluorination at the central units. Using density functional theory (DFT) and time-dependent DFT calculations, we explore the impact of an altered fluorinated location at the central units of and on the photoelectric properties. The molecular planarity, dipole moment, electrostatic potential (ESP) and its fluctuation, exciton binding energy (), singlet-triplet energy gap, and absorption spectrum are obtained with combinations of traditional hybrid or long-range corrected density functionals and Pople basis sets. We also developed a new numerical method to analyze the fluctuation of ESP quantitatively because recent reports discussed its importance. The computed data suggest that newly designed and are promising NFAs because they exhibit enhanced planarity, lower (by at least 0.002 eV), and higher averaged ESP (by at least 0.247 kcal/mol) compared to . We also find that fluorination of the core units reduces noticeably, increases the ESP standard deviation, and raises the average ESP except for ortho (outside) substitutions. These findings offer valuable physical insights into the effects of core fluorination, which can serve as a guide for the rational design of high-performance QX-based NFAs.
通过卤化修饰Y6型非富勒烯受体(NFAs)中心单元的策略,在设计新型光伏材料方面已变得流行,并在改善光伏性能方面显示出显著效果。然而,这些NFAs中心单元的卤化如何影响光电性能的潜在机制仍然相当难以捉摸。在本文中,针对两个已报道的在中心单元具有不同程度环融合的有前景的NFAs,我们设计了4种新的NFAs,并通过对中心单元进行氟化系统地构建了10种NFAs模型。使用密度泛函理论(DFT)和含时DFT计算,我们探究了和中心单元氟化位置改变对光电性能的影响。通过传统杂化或长程校正密度泛函与Pople基组的组合,获得了分子平面性、偶极矩、静电势(ESP)及其波动、激子结合能()、单重态 - 三重态能隙和吸收光谱。我们还开发了一种新的数值方法来定量分析ESP的波动,因为最近的报道讨论了其重要性。计算数据表明,新设计的和是有前景的NFAs,因为与相比,它们表现出增强的平面性、更低的(至少降低0.002 eV)和更高的平均ESP(至少增加0.247 kcal/mol)。我们还发现,核心单元的氟化显著降低了,增加了ESP的标准偏差,并且除了邻位(外部)取代外提高了平均ESP。这些发现为核心氟化的影响提供了有价值的物理见解,可作为基于QX的高性能NFAs合理设计的指南。