Zhao Wenchao, Lv Xiaowei, Xu Qianqian, Wen Zhengji, Shao Yuchuan, Liu Changlong, Dai Ning
School of Electronic Information, Huzhou College Huzhou 313000 China
Huzhou Key Laboratory of Urban Multidimensional Perception and Intelligent Computing Huzhou 313000 China.
Nanoscale Adv. 2025 May 12;7(12):3817-3827. doi: 10.1039/d5na00278h. eCollection 2025 Jun 10.
This paper presents a multifunctional terahertz device based on a dual-tunable structure incorporating graphene and vanadium oxide (VO). This device enables the switching between narrowband perfect absorption and ultra-broadband performance through the phase transition characteristics of VO and the adjustment of graphene Fermi level. Simulation results demonstrate that when VO is in its metallic state, the THz device exhibits ultra-broadband absorption, achieving a high absorption rate exceeding 0.9 within the frequency range of 2.9-7.67 THz. Conversely, when VO is in its insulating state, the THz device displays perfect absorption peaks at 2.8 and 8.41 THz. In the broadband mode, the absorption band can be broadened to an ultra-broadband range by adjusting the Fermi level of graphene. Furthermore, the structural parameters of terahertz devices, as well as the incident and polarization angles of electromagnetic waves, were investigated. The results demonstrated that the terahertz devices exhibit a certain degree of manufacturing tolerance, stability against variations in incident angles, and favorable polarization insensitivity. Overall, this design holds promising application prospects in fields such as terahertz absorption, refractive index sensing, and terahertz detection.
本文提出了一种基于包含石墨烯和氧化钒(VO)的双可调结构的多功能太赫兹器件。该器件通过VO的相变特性和石墨烯费米能级的调节,实现了窄带完美吸收和超宽带性能之间的切换。仿真结果表明,当VO处于金属态时,太赫兹器件呈现超宽带吸收,在2.9 - 7.67太赫兹频率范围内实现超过0.9的高吸收率。相反,当VO处于绝缘态时,太赫兹器件在2.8和8.41太赫兹处显示出完美吸收峰。在宽带模式下,通过调节石墨烯的费米能级,吸收带可拓宽至超宽带范围。此外,还研究了太赫兹器件的结构参数以及电磁波的入射角和偏振角。结果表明,太赫兹器件具有一定的制造容差、对入射角变化的稳定性以及良好的偏振不敏感性。总体而言,该设计在太赫兹吸收、折射率传感和太赫兹检测等领域具有广阔的应用前景。