Tunable bandwidth terahertz perfect absorption device based on vanadium dioxide phase transition control.

Utilizing the phase transition principle of VO, this paper presents a tunable ultra-wideband terahertz perfect absorption device with simple structure and tunability. The proposed broadband terahertz perfect absorption device is a three-layer structure with a metal reflective layer, a silicon dioxide dielectric layer and a VO layer from bottom to top. It was found that the terahertz perfect absorption device's absorption could be dynamically adjusted from 1.2% to 99.9% when changing from an insulated to a metallic state. With the VO in the metallic state, the terahertz perfect absorption device has an absorption efficiency of more than 90% in 4.00 to 10.08 THz's ultra-broadband range and near-perfect absorption is achieved in the ranges of 4.71 THz to 5.16 THz and 7.74 THz to 8.06 THz. To explain the working principle of this terahertz perfect absorption device, this paper utilizes wave interference's principle, theory of impedance matching and electric field analysis. Compared to previously reported terahertz metamaterial devices, the vanadium dioxide device proposed in this paper is significantly optimized in terms of tunable range and absorption bandwidth. In addition, the terahertz perfect absorption device is polarization insensitive and maintains good absorptivity over a wide-angle incidence range. This tunable ultra-wideband terahertz perfect absorption device could have applications in the fields of modulation, stealth devices, and thermal emission devices.