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多晶少层Td-WTe薄膜中厚度调制的面外自旋轨道扭矩的观测

Observation of Thickness-Modulated Out-of-Plane Spin-Orbit Torque in Polycrystalline Few-Layer Td-WTe Film.

作者信息

Zheng Mingkun, Zhang Wancheng, Lv You, Liu Yong, Xiong Rui, Zhang Zhenhua, Lu Zhihong

机构信息

State Key Laboratory of Advanced Refractories, Wuhan University of Science and Technology, Wuhan 430081, China.

School of Materials, Wuhan University of Science and Technology, Wuhan 430081, China.

出版信息

Nanomaterials (Basel). 2025 May 19;15(10):762. doi: 10.3390/nano15100762.

Abstract

The low-symmetry Weyl semimetallic Td-phase WTe exhibits both a distinct out-of-plane damping torque (τDL) and exceptional charge-spin interconversion efficiency enabled by strong spin-orbit coupling, positioning it as a prime candidate for spin-orbit torque (SOT) applications in two-dimensional transition metal dichalcogenides. Herein, we report on thickness-dependent unconventional out-of-plane τDL in chemically vapor-deposited (CVD) polycrystalline Td-WTe ()/NiFe/MgO/Ti (Td-WTN-) heterostructures. Angle-resolved spin-torque ferromagnetic resonance measurements on the Td-WTN-12 structure showed significant spin Hall conductivities of = 4.93 × 10 (ℏ/2e) Ωm and = 0.81 × 10 (ℏ/2e) Ωm, highlighting its potential for wafer-scale spin-orbit torque device applications. Additionally, a detailed examination of magnetotransport properties in polycrystalline few-layer Td-WTe films as a function of thickness revealed a marked amplification of the out-of-plane magnetoresistance, which can be ascribed to the anisotropic nature of charge carrier scattering mechanisms within the material. Spin pumping measurements in Td-WTN- heterostructures further revealed thickness-dependent spin transport properties of Td-WTe, with damping analysis yielding an out-of-plane spin diffusion length of ≈ 14 nm.

摘要

低对称外尔半金属Td相WTe既表现出独特的面外阻尼转矩(τDL),又因强自旋轨道耦合而具有卓越的电荷 - 自旋相互转换效率,使其成为二维过渡金属二卤化物中自旋轨道转矩(SOT)应用的主要候选材料。在此,我们报道了化学气相沉积(CVD)多晶Td - WTe()/NiFe/MgO/Ti(Td - WTN - )异质结构中与厚度相关的非常规面外τDL。对Td - WTN - 12结构进行的角分辨自旋转矩铁磁共振测量显示,其自旋霍尔电导率分别为 = 4.93×10(ℏ/2e)Ωm和 = 0.81×10(ℏ/2e)Ωm,突出了其在晶圆级自旋轨道转矩器件应用方面的潜力。此外,对多晶少层Td - WTe薄膜的磁输运性质随厚度变化的详细研究揭示了面外磁电阻的显著放大,这可归因于材料内电荷载流子散射机制的各向异性。在Td - WTN - 异质结构中的自旋泵浦测量进一步揭示了Td - WTe与厚度相关的自旋输运性质,阻尼分析得出面外自旋扩散长度约为 = 14 nm。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3268/12113999/3eedbf19cb91/nanomaterials-15-00762-g001.jpg

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