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铵(NH)作为杂质及晶种比在六水合硫酸镍间歇冷却结晶中的影响研究。

Study on the effect of ammonium (NH) as impurity and seed ratio on batch cooling crystallization of nickel sulfate hexahydrate.

作者信息

Andriyan Mohammad Wahyu, Yang Jianguang, Xu Kaihua, Hu Yi, Nan Tianxiang, Liu Lian, Yu Qing

机构信息

School of Metallurgy and Environment, Central South University, Changsha, 410083, China.

GEM Co., Ltd., Jingmen, 448124, China.

出版信息

Sci Rep. 2025 May 27;15(1):18459. doi: 10.1038/s41598-025-02138-0.

Abstract

This research examines the influence of NH impurities and seed ratio on growth mechanisms and characteristics of nickel sulfate hexahydrate in batch cooling crystallization. The kinetic behavior, thermal properties, and functional groups were also studied under the influence of NH impurities. At low concentrations of impurities, competing process between Ni and NH ions to bind with SO causes the crystal output yield and growth rate to decrease and the crystallization activation energy increases. At high concentrations of impurities, NH ions incorporate into crystal structure and produce double salt (NH)Ni(SO) 6HO. The formation of double salt causes the crystal output yield and growth rate to increase and the crystallization activation energy decreases. The presence of NH ions, whether in low or high concentrations, induces structural distortion in the crystal lattice and the crystals could exhibit heat stability up to 80 °C. Furthermore, crystal growth mechanisms can change significantly affected by NH impurities rather than seed ratio. Impurity tends to attach to the crystal when the impurity concentration is low and impurity can be incorporated when the concentration is high. The seed ratio significantly increases crystal output yield and slightly increases crystal purity.

摘要

本研究考察了NH杂质和晶种比在间歇冷却结晶过程中对六水合硫酸镍生长机制和特性的影响。同时研究了在NH杂质影响下的动力学行为、热性能和官能团。在低杂质浓度下,Ni离子和NH离子与SO结合的竞争过程导致晶体产量和生长速率降低,结晶活化能增加。在高杂质浓度下,NH离子掺入晶体结构并生成复盐(NH)Ni(SO)·6HO。复盐的形成导致晶体产量和生长速率增加,结晶活化能降低。NH离子的存在,无论浓度高低,都会引起晶格结构畸变,晶体在高达80°C时仍具有热稳定性。此外,NH杂质对晶体生长机制的影响比晶种比显著得多。当杂质浓度较低时,杂质倾向于附着在晶体上;当浓度较高时,杂质可以掺入晶体。晶种比显著提高了晶体产量,并略微提高了晶体纯度。

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