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通过调节前沿分子轨道能级实现稳定的窄带蓝色有机发光二极管

Stable narrowband blue OLEDs by modulating frontier molecular orbital levels.

作者信息

Fan Xiao-Chun, Tang Xun, Zhang Tong-Yuan, Kohata Shintaro, Yu Jia, Chen Xian-Kai, Wang Kai, Hatakeyama Takuji, Adachi Chihaya, Zhang Xiao-Hong

机构信息

Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, China.

Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, Japan.

出版信息

Nat Commun. 2025 May 28;16(1):4936. doi: 10.1038/s41467-025-60172-y.

Abstract

Energy level alignment of frontier molecular orbital (FMO) is essential for controlling charge carrier and exciton dynamics in organic light-emitting diodes (OLEDs). However, multiple resonance (MR) emitters with exceptional narrowband luminescence typically suffer from inadequate FMO levels. Herein, a conventional blue MR prototype with a shallow highest occupied molecular orbital (HOMO) level of -5.32 eV is initially employed to reveal the charge carrier and exciton dynamics. Severe hole trapping by its shallow HOMO significantly hinders its transport. More importantly, trapped carriers induce direct exciton formation and recombination at MR emitters in a hyperfluorescent system, leading to triplet accumulation in MR emitters. To resolve these issues, a proof-of-concept wavefunction perturbation strategy is proposed by incorporating cyano motifs at peripheral sites of MR backbone to adjust the energy levels. This approach significantly shifts HOMOs of 0.36 and 0.51 eV without compromising colour purity. The derivative substituting meta-boron position (mCNDB) exhibits a pure-blue emission peaking at 459 nm with a narrow bandwidth of 13 nm. The detrimental carrier trapping effect is eliminated, enhancing external quantum efficiency to exceeding 23%, maintaining around 20% at 1000 cd m, and improving the device stability.

摘要

前沿分子轨道(FMO)的能级对齐对于控制有机发光二极管(OLED)中的电荷载流子和激子动力学至关重要。然而,具有异常窄带发光的多重共振(MR)发射器通常存在FMO能级不足的问题。在此,最初采用具有-5.32 eV浅最高占据分子轨道(HOMO)能级的传统蓝色MR原型来揭示电荷载流子和激子动力学。其浅HOMO导致的严重空穴捕获显著阻碍了其传输。更重要的是,被俘获的载流子在超荧光系统中的MR发射器处诱导直接激子形成和复合,导致MR发射器中的三重态积累。为了解决这些问题,提出了一种概念验证的波函数微扰策略,即在MR主链的外围位点引入氰基基序来调整能级。这种方法在不影响色纯度的情况下,将HOMO显著移动了0.36和0.51 eV。衍生物取代间硼位置(mCNDB)在459 nm处呈现纯蓝色发射,带宽窄至13 nm。消除了有害的载流子捕获效应,将外部量子效率提高到超过23%,在1000 cd m时保持在20%左右,并提高了器件稳定性。

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