Wang Peng, Yang Ke, Zhang Lingcai, Dai Xingliang, Ye Zhizhen, He Haiping, Fan Chao
School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, P. R. China.
Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Zhejiang Provincial Engineering Research Center of Oxide Semiconductors for Environmental and Optoelectronic Applications, Institute of Wenzhou, Zhejiang University, Wenzhou, 325006, P. R. China.
Small. 2025 Aug;21(31):e2505221. doi: 10.1002/smll.202505221. Epub 2025 May 29.
Perovskite quantum dots (QDs) hold promise for next-generation display applications but suffer from stability challenges, particularly thermal- and light-induced photoluminescence (PL) quenching. Here, a fluoride post-treatment (FPT) strategy is developed to address this challenge for CsPbBr QDs embedded in silica matrices (CsPbBr/silica composites). The FPT enables epitaxial growth of BaF shells on CsPbBr surfaces via thermally driven fluoride ion diffusion, which passivates surfaces and suppresses thermal- and light-induced defects in CsPbBr. The FPT-treated CsPbBr/silica composites exhibit a high PL quantum yield of 94.5%, a complete PL recovery after a thermal cycling (up to 403 K), and retain 95.6% of their initial PL intensity after 1055 h with intense blue light irradiation (350 mW cm). To the best of the knowledge, these FPT-treated CsPbBr/silica composites represent the most stable CsPbBr emitters under light aging. Theoretical calculations reveal that the BaF shells elevate the formation energy of bromine vacancies and anchor [PbBr] octahedra in CsPbBr, thereby inhibiting defect generation. A liquid crystal display (LCD) equipped with these composites achieves a 120% national television system committee color gamut. This work provides a robust route to stabilize CsPbBr QDs for high-performance LCD applications.
钙钛矿量子点（QDs）在下一代显示应用方面具有潜力，但面临稳定性挑战，尤其是热致和光致光致发光（PL）猝灭。在此，开发了一种氟化物后处理（FPT）策略来解决嵌入二氧化硅基质中的CsPbBr量子点（CsPbBr/二氧化硅复合材料）的这一挑战。FPT通过热驱动的氟离子扩散使BaF壳层在CsPbBr表面外延生长，从而钝化表面并抑制CsPbBr中的热致和光致缺陷。经FPT处理的CsPbBr/二氧化硅复合材料表现出94.5%的高PL量子产率，热循环（高达403 K）后PL完全恢复，在350 mW/cm的强蓝光照射1055 h后仍保留其初始PL强度的95.6%。据所知，这些经FPT处理的CsPbBr/二氧化硅复合材料是光老化下最稳定的CsPbBr发光体。理论计算表明，BaF壳层提高了溴空位的形成能，并将[PbBr]八面体固定在CsPbBr中，从而抑制缺陷产生。配备这些复合材料的液晶显示器（LCD）实现了120%的国家电视系统委员会色域。这项工作为稳定用于高性能LCD应用的CsPbBr量子点提供了一条可靠的途径。
