Liu Yulian, Zhang Xi, Xu Xiaofan, Dai Junfeng, Quan Zewei
Department of Chemistry, and Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China.
Henan Key Laboratory of Quantum Materials and Quantum Energy, School of Future Technology, Henan University, Zhenzhou, Henan, 475001, China.
Angew Chem Int Ed Engl. 2025 Aug 4;64(32):e202510579. doi: 10.1002/anie.202510579. Epub 2025 Jun 9.
Chiral hybrid metal halides (HMHs), characterized by their non-centrosymmetric crystal structures and exceptional photophysical properties, are promising for second-order nonlinear and linear optics, including second-harmonic generation (SHG) and circularly polarized luminescence (CPL). However, chiral HMHs with simultaneously strong SHG response and efficient CPL still present a challenge, due to the distinct structural and electronic requirements of these properties. Here, we report a halogen substitution strategy within inorganic octahedra to modulate the crystal structure and simultaneously enhance both SHG and CPL properties. Three pairs of chiral Sb-based HMHs are synthesized: (R/S-MBA)IASbBr (MBA = α-methylbenzylammonium, IA = imidazole, abbreviated as R/S-SbBr), (R/S-MBA)IASbBrCl (R/S-SbBrCl), and (R/S-MBA)IASbCl (R/S-SbCl). The gradual halogen substitution from R/S-SbBr to R/S-SbCl significantly enhances the structural chirality of inorganic octahedra, resulting in a strong SHG response intensity of 1.4 × KDP and a high luminescence dissymmetry factor of 3.82 × 10. The combination of SHG and CPL performance outperforms that of previous chiral HMHs. Experimental results and theoretical calculations indicate that these enhancements originate from gradually increased octahedral distortions induced by halogen substitution. This work establishes a structural optimization strategy for advancing high-performance SHG and CPL in chiral HMHs, paving the way for their broader photonic applications.
手性杂化金属卤化物(HMHs)具有非中心对称晶体结构和优异的光物理性质,在二阶非线性和线性光学领域具有广阔应用前景,包括二次谐波产生(SHG)和圆偏振发光(CPL)。然而,由于这些性质对结构和电子的要求不同,同时具有强SHG响应和高效CPL的手性HMHs仍然是一个挑战。在此,我们报道了一种在无机八面体中进行卤素取代的策略,以调节晶体结构并同时增强SHG和CPL性质。合成了三对手性锑基HMHs:(R/S-MBA)IASbBr(MBA = α-甲基苄基铵,IA = 咪唑,缩写为R/S-SbBr)、(R/S-MBA)IASbBrCl(R/S-SbBrCl)和(R/S-MBA)IASbCl(R/S-SbCl)。从R/S-SbBr到R/S-SbCl的逐步卤素取代显著增强了无机八面体的结构手性,产生了1.4×KDP的强SHG响应强度和3.82×10的高发光不对称因子。SHG和CPL性能的结合优于先前的手性HMHs。实验结果和理论计算表明,这些增强源于卤素取代引起的八面体畸变逐渐增加。这项工作建立了一种结构优化策略,以推进手性HMHs中的高性能SHG和CPL,为其更广泛的光子应用铺平了道路。