钆（Gd）掺杂对铜锡钆硫（CuSnGdS）薄膜太阳能电池的影响。

Influence of Gd doping on CuSnGdS thin film solar cell.

作者信息

Baturay Şilan, Gezgin Serap Yiğit, Köylü M Zafer, Basyooni-M Kabatas Mohamed A, Kiliç Hamdi Şükür

机构信息

Department of Physics, Faculty of Science, Dicle University, Diyarbakir 21280, Turkey.

Department of Physics, Faculty of Science, University of Selcuk, Selcuklu, Konya 42031, Turkey.

出版信息

iScience. 2025 May 6;28(6):112597. doi: 10.1016/j.isci.2025.112597. eCollection 2025 Jun 20.

DOI:10.1016/j.isci.2025.112597

PMID:40496812

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC12150065/

Abstract

The effect of the Gd/Sn composition ratio of CuSnGdS is examined. The films are fabricated on glass substrates in a sulfur atmosphere via the spin coating. The influence of the Gd/Sn composition ratio on the structural, morphological, optical, and electrical properties of the films is investigated using X-ray diffraction, FESEM, UV-Vis, and Hall effect. XRD patterns for the films revealed that all films have a monoclinic polycrystalline. The morphological and optical properties of the films show the formation of spherical grains and polygonal structures with an energy band in the range of 2.10-1.50 eV. The electrical properties of the films are changed by increasing the Gd/Sn composition ratio in the film. Furthermore, the CuSnGdS/CdS heterojunction solar cell was modeled by SCAPS-1D. The optimized conditions yielded exceptional photovoltaic parameters, achieving an open-circuit voltage of 0.7885 V, short circuit current density of 41.09 mA/cm, fill factor of 85.30%, and an efficiency of 27.3%.

摘要

研究了CuSnGdS的Gd/Sn组成比的影响。通过旋涂法在硫气氛中的玻璃基板上制备薄膜。使用X射线衍射、场发射扫描电子显微镜、紫外可见光谱和霍尔效应研究了Gd/Sn组成比对薄膜的结构、形态、光学和电学性能的影响。薄膜的X射线衍射图谱表明，所有薄膜均为单斜多晶。薄膜的形态和光学性能显示形成了球形晶粒和多边形结构，其能带范围为2.10 - 1.50 eV。薄膜的电学性能通过增加薄膜中的Gd/Sn组成比而改变。此外，用SCAPS - 1D对CuSnGdS/CdS异质结太阳能电池进行了建模。优化条件产生了优异的光伏参数，开路电压为0.7885 V，短路电流密度为41.09 mA/cm，填充因子为85.30%，效率为27.3%。