Francis Sanju, Kushwah Nisha, Bathula Vishwanadh, Gotluru Kedarnath
Radiation Technology Development, Bhabha Atomic Research Centre, Mumbai, Maharashtra, India.
Department of Chemistry, Bhabha Atomic Research Centre, Mumbai, Maharashtra, India.
R Soc Open Sci. 2025 Jun 11;12(6):250692. doi: 10.1098/rsos.250692. eCollection 2025 Jun.
ZnS is a benign and multi-utility semiconductor with absorption in the UV-vis region of the energy spectrum. Nevertheless, the synthesis of ZnS quantum dots (QDs) with tunable optical properties and a reasonable photoluminescent quantum yield (PLQY) adopting a new hybrid method is highly recognized. The present study involves the simple synthesis of self-capped wurtzite ZnS QDs employing a hybrid method comprising a single-source molecular precursor (SSMP), 2-(dimethylamino)ethanethiolate of zinc(II), and γ-radiation followed by elucidation of the formation mechanism of self-capped ZnS QDs. Here, the SSMP has been γ-irradiated in a solution to yield ZnS QDs of varying size at different radiation doses. The crystal structure, elemental composition, shape and optical properties of pristine self-capped ZnS QDs were assessed by powder X-ray diffraction, energy dispersive X-ray spectroscopy, electron microscopy, UV-vis, photoluminescence and diffused reflectance spectroscopy, respectively. The size-tailored emission maximum and optical band gaps were tweaked to a tune of 417-537 nm and 4.17-4.23 eV by altering the γ-radiation dose with PLQYs realized in the range of 10-24%. Lifetimes of these samples are in the range of 1.69-2.68 and 6.82-34.88 ns for the fast- and slow-decaying components, respectively.
硫化锌是一种良性且用途广泛的半导体，在能谱的紫外-可见区域有吸收。然而，采用一种新的混合方法合成具有可调光学性质和合理光致发光量子产率（PLQY）的硫化锌量子点（QDs）受到高度认可。本研究涉及采用一种混合方法简单合成自封端纤锌矿型硫化锌量子点，该方法包括单源分子前驱体（SSMP）、锌（II）的2-（二甲基氨基）乙硫醇盐和γ辐射，随后阐明自封端硫化锌量子点的形成机制。在此，SSMP在溶液中进行γ辐照，以在不同辐射剂量下产生不同尺寸的硫化锌量子点。分别通过粉末X射线衍射、能量色散X射线光谱、电子显微镜、紫外-可见光谱、光致发光光谱和漫反射光谱评估原始自封端硫化锌量子点的晶体结构、元素组成、形状和光学性质。通过改变γ辐射剂量，将尺寸定制的发射最大值和光学带隙调整到417-537nm和4.17-4.23eV的范围，实现的PLQY在10-24%的范围内。这些样品的快速和慢速衰减成分的寿命分别在1.69-2.68ns和6.82-34.88ns的范围内。
