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通过无掺杂方法实现高性能无缺陷的钴酸锂阴极

Achieving High-Performance Defect-Free LiCoO Cathode via a Dopant-Free Approach.

作者信息

Jiao Sichen, Li Yu, Lin Ting, Feng Shuhang, Zhang Chengzhen, Pan Hongyi, Lin Weiguang, Yu Xiqian, Gu Lin, Huang Xuejie, Chen Liquan, Li Hong

机构信息

Beijing Frontier Research Center on Clean Energy, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.

Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.

出版信息

J Am Chem Soc. 2025 Jul 2;147(26):22839-22850. doi: 10.1021/jacs.5c05162. Epub 2025 Jun 17.

DOI:10.1021/jacs.5c05162
PMID:40526832
Abstract

Elevating the charging voltage of layered oxide cathodes to achieve higher capacity induces phase transitions associated with transition metal slab gliding, which significantly impacts the material's structural stability. Doping with inert elements is commonly employed to delay such phase transitions to higher voltages. However, these electrochemically inactive elements do not participate in redox reactions, thereby compromising lithium storage capacity. This compromise raises a critical and underexplored issue regarding whether doped materials with reduced capacity still maintain an advantage in energy density. In this study, using LiCoO as a model material, it was observed that an increase in the concentration of Al dopant indeed delayed the onset voltage of the H1-3 phase transition. However, the extent of delithiation associated with this phase transition remains largely unchanged. When the discharge capacity is controlled to just below the threshold for the global H1-3 phase transition, the undoped material demonstrates even superior capacity retention and rate performance compared to the doped samples, at a lower charging cutoff voltage. Comprehensive experimental characterizations and theoretical calculations reveal that the doping-induced structural defects hinder Li conduction and promote oxygen release, consequently accelerating performance degradation. This study suggests that in the development of high-voltage layered oxide cathodes, it is crucial to prioritize enhancing material capacity. Additionally, it is imperative to meticulously assess the adverse effects of doping, as industrial preparation methods often lead to nonideal dopant incorporation, causing undesirable structural defects that are particularly harmful to the reversibility of high-voltage phase transitions.

摘要

提高层状氧化物阴极的充电电压以实现更高的容量会引发与过渡金属板滑动相关的相变,这会显著影响材料的结构稳定性。通常采用掺杂惰性元素来将此类相变延迟到更高的电压。然而,这些电化学惰性元素不参与氧化还原反应,从而损害了锂存储容量。这种折衷引发了一个关键且未被充分探索的问题,即容量降低的掺杂材料在能量密度方面是否仍保持优势。在本研究中,以LiCoO作为模型材料,观察到Al掺杂剂浓度的增加确实延迟了H1-3相变的起始电压。然而,与该相变相关的脱锂程度基本保持不变。当将放电容量控制在刚好低于全局H1-3相变的阈值时,在较低的充电截止电压下,未掺杂材料相比于掺杂样品表现出甚至更优异的容量保持率和倍率性能。全面的实验表征和理论计算表明,掺杂引起的结构缺陷阻碍了Li传导并促进了氧释放,从而加速了性能退化。本研究表明,在高压层状氧化物阴极的开发中,优先提高材料容量至关重要。此外,必须仔细评估掺杂的不利影响,因为工业制备方法往往会导致不理想的掺杂剂掺入,从而产生对高压相变的可逆性特别有害的不良结构缺陷。

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