Nadeem Muhammad Shahid, Miao Baoji, Naz Aqsa, Salman Muhammad, Bai Jinbo, Al-Tahan Mohammed A, Althobaiti Ahmed, Mohammad Alsharef, Yasir Muhammad, Ahmad Farooq, Munawar Tauseef, Shakoor Abdul, Iqbal Faisal
Henan International Joint Laboratory of Nano-Photoelectric Magnetic Material, Zhengzhou 450001, Henan, PR China.
Institute of Chemistry, The Islamia University of Bahawalpur, Bahawalpur 63100, Pakistan.
J Colloid Interface Sci. 2025 Dec;699(Pt 1):138045. doi: 10.1016/j.jcis.2025.138045. Epub 2025 Jun 10.
In this work, we have reported p-CoO/n-ZnHoCuO junction growth via a cost-effective and straightforward co-precipitation synthesis route for the first time. The structural study was investigated by employing XRD and FTIR spectroscopy. An optical study was carried out by UV-visible spectroscopy. Whereas the surface morphology and elemental analysis were analyzed using SEM and EDX. TEM analysis was included to explore the internal texture of the p-n junction. In the meantime, the XPS demonstrated that Cu, Ho-doping in ZnO and coupling with CoO resulted in the production of lattice defects and oxygen vacancies in ZnO, along with different oxidation states of Ho, Cu, Zn, Co, and O. In this context, the photocatalytic activity was investigated with the help of two different dyes, such as MB and MO dyes, under sunlight irradiation. As-synthesized material, when employed to fabricate the electrode material and assess its potential for supercapacitor applications, demonstrated an outstanding specific capacity of 1812.90 C/g at 7.5 A/g, as measured via GCD testing, highlighting its potential for supercapacitor applications. Additionally, it demonstrated a satisfactory electrochemical and electrocatalytic properties for the as-fabricated junction, OER activity and energy storage capabilities of such materials have been confirmed by coupling contact. The calculated Tafel slope was 43.14 mV dec shown by the p-n junction catalyst's redox activity. At a current density of 10 mA cm, the developed electrocatalyst had a low overpotential of 115 mV. The effects of Cu, Ho-doping on ZnO and the coupling of CoO support emphasize the exceptional benefits of electrochemical performance and enhance its potential for use in effective photocatalysis, electrolysis, and energy storage technologies.
在本工作中,我们首次通过一种经济高效且简便的共沉淀合成路线报道了p-CoO/n-ZnHoCuO结的生长。采用X射线衍射(XRD)和傅里叶变换红外光谱(FTIR)对其结构进行了研究。通过紫外-可见光谱进行了光学研究。而表面形貌和元素分析则使用扫描电子显微镜(SEM)和能谱仪(EDX)进行。还进行了透射电子显微镜(TEM)分析以探究p-n结的内部结构。同时,X射线光电子能谱(XPS)表明,ZnO中的Cu、Ho掺杂以及与CoO的耦合导致了ZnO中晶格缺陷和氧空位的产生,同时Ho、Cu、Zn、Co和O具有不同的氧化态。在此背景下,在阳光照射下借助两种不同的染料,如亚甲基蓝(MB)和甲基橙(MO)染料,对光催化活性进行了研究。合成的材料在用于制造电极材料并评估其超级电容器应用潜力时,通过恒流充放电(GCD)测试测得,在7.5 A/g电流密度下展现出1812.90 C/g的出色比容量,突出了其在超级电容器应用方面的潜力。此外,对于制备的结,它表现出令人满意的电化学和电催化性能,通过耦合接触证实了此类材料的析氧反应(OER)活性和储能能力。p-n结催化剂的氧化还原活性显示计算出的塔菲尔斜率为43.14 mV dec⁻¹。在10 mA cm⁻²的电流密度下,所制备的电催化剂具有115 mV的低过电位。Cu、Ho掺杂对ZnO的影响以及CoO载体的耦合强调了电化学性能的卓越优势,并增强了其在有效光催化、电解和储能技术中的应用潜力。